Source: Superlattices and Microstructures. Conference titles: International Conference on Superlattices, Microructure and Microdevices. Unidade: EESC
Subjects: SEMICONDUTORES, ENGENHARIA ELÉTRICA
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ABNT
MANZOLI, J. E. e ROMERO, Murilo Araújo e HIPÓLITO, Oscar. Self-consistent modeling of C-V and electronic properties of strained heterostructure modulation-doped field-effect transistors. Superlattices and Microstructures. London: Academic Press. . Acesso em: 13 nov. 2024. , 1999APA
Manzoli, J. E., Romero, M. A., & Hipólito, O. (1999). Self-consistent modeling of C-V and electronic properties of strained heterostructure modulation-doped field-effect transistors. Superlattices and Microstructures. London: Academic Press.NLM
Manzoli JE, Romero MA, Hipólito O. Self-consistent modeling of C-V and electronic properties of strained heterostructure modulation-doped field-effect transistors. Superlattices and Microstructures. 1999 ; 25( 1/2): 289-293.[citado 2024 nov. 13 ]Vancouver
Manzoli JE, Romero MA, Hipólito O. Self-consistent modeling of C-V and electronic properties of strained heterostructure modulation-doped field-effect transistors. Superlattices and Microstructures. 1999 ; 25( 1/2): 289-293.[citado 2024 nov. 13 ]
