Self-consistent modeling of C-V and electronic properties of strained heterostructure modulation-doped field-effect transistors (1999)
- Authors:
- Autor USP: ROMERO, MURILO ARAUJO - EESC
- Unidade: EESC
- Subjects: SEMICONDUTORES; ENGENHARIA ELÉTRICA
- Language: Inglês
- Imprenta:
- Publisher: Academic Press
- Publisher place: London
- Date published: 1999
- Source:
- Título: Superlattices and Microstructures
- Volume/Número/Paginação/Ano: v. 25, n. 1/2, p. 289-293, 1999
- Conference titles: International Conference on Superlattices, Microructure and Microdevices
-
ABNT
MANZOLI, J. E. e ROMERO, Murilo Araujo e HIPÓLITO, Oscar. Self-consistent modeling of C-V and electronic properties of strained heterostructure modulation-doped field-effect transistors. Superlattices and Microstructures. London: Academic Press. . Acesso em: 25 jan. 2026. , 1999 -
APA
Manzoli, J. E., Romero, M. A., & Hipólito, O. (1999). Self-consistent modeling of C-V and electronic properties of strained heterostructure modulation-doped field-effect transistors. Superlattices and Microstructures. London: Academic Press. -
NLM
Manzoli JE, Romero MA, Hipólito O. Self-consistent modeling of C-V and electronic properties of strained heterostructure modulation-doped field-effect transistors. Superlattices and Microstructures. 1999 ; 25( 1/2): 289-293.[citado 2026 jan. 25 ] -
Vancouver
Manzoli JE, Romero MA, Hipólito O. Self-consistent modeling of C-V and electronic properties of strained heterostructure modulation-doped field-effect transistors. Superlattices and Microstructures. 1999 ; 25( 1/2): 289-293.[citado 2026 jan. 25 ] - Triple band double pass EDFA/TDFA with an embedded DCF for DWDM and CWDM applications
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