Guimarães, Francisco Eduardo Gontijo 
; Lubyshev, D I; Silva, S W; Chitta, V A; Galzerani, J C; Basmaji, Pierre
Source: Solid State Communications. Conference titles: International Conference on Shallow Level Centers in Semiconductors. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), MATÉRIA CONDENSADA
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ABNT
GUIMARÃES, Francisco Eduardo Gontijo et al. Strain related shallow levels in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' quantum well structures. Solid State Communications. New York: Instituto de Física de São Carlos, Universidade de São Paulo. . Acesso em: 17 out. 2024. , 1995APA
Guimarães, F. E. G., Lubyshev, D. I., Silva, S. W., Chitta, V. A., Galzerani, J. C., & Basmaji, P. (1995). Strain related shallow levels in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' quantum well structures. Solid State Communications. New York: Instituto de Física de São Carlos, Universidade de São Paulo.NLM
Guimarães FEG, Lubyshev DI, Silva SW, Chitta VA, Galzerani JC, Basmaji P. Strain related shallow levels in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' quantum well structures. Solid State Communications. 1995 ;93( 5 ): 466.[citado 2024 out. 17 ]Vancouver
Guimarães FEG, Lubyshev DI, Silva SW, Chitta VA, Galzerani JC, Basmaji P. Strain related shallow levels in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' quantum well structures. Solid State Communications. 1995 ;93( 5 ): 466.[citado 2024 out. 17 ]
