Strain related shallow levels in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' quantum well structures (1995)
- Authors:
- USP affiliated authors: CHITTA, VALMIR ANTONIO - IFSC ; BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS); MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Solid State Communications
- Volume/Número/Paginação/Ano: v.93, n.5 , p.466, Feb. 1995
- Conference titles: International Conference on Shallow Level Centers in Semiconductors
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ABNT
GUIMARÃES, Francisco Eduardo Gontijo et al. Strain related shallow levels in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' quantum well structures. Solid State Communications. New York: Instituto de Física de São Carlos, Universidade de São Paulo. . Acesso em: 18 abr. 2024. , 1995 -
APA
Guimarães, F. E. G., Lubyshev, D. I., Silva, S. W., Chitta, V. A., Galzerani, J. C., & Basmaji, P. (1995). Strain related shallow levels in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' quantum well structures. Solid State Communications. New York: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Guimarães FEG, Lubyshev DI, Silva SW, Chitta VA, Galzerani JC, Basmaji P. Strain related shallow levels in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' quantum well structures. Solid State Communications. 1995 ;93( 5 ): 466.[citado 2024 abr. 18 ] -
Vancouver
Guimarães FEG, Lubyshev DI, Silva SW, Chitta VA, Galzerani JC, Basmaji P. Strain related shallow levels in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' quantum well structures. Solid State Communications. 1995 ;93( 5 ): 466.[citado 2024 abr. 18 ] - Effect of alloy disorder and structural defects on exciton properties in lattice-matched (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' quantum wells
- Effect of alloy disorder and structural defects on excitonic properties in (100)-and (311)-oriented 'IN''GA''AS' / 'GA''AS' quantum wells
- Effect of alloy disorder and structural defects on exciton properties in lattice-matched (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' quantum wells
- Influence of surface structure on surface segregation and alloy quality in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures
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