Source: Proceedings. Conference titles: Conference of the Brazilian Microeletronics Society. Unidade: EP
Assunto: SEMICONDUTORES
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ALAYO CHÁVEZ, Marco Isaías e PEREYRA, Inés. Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 27 jan. 2026.APA
Alayo Chávez, M. I., & Pereyra, I. (1996). Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures. In Proceedings. São Paulo: Sbmicro.NLM
Alayo Chávez MI, Pereyra I. Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures. Proceedings. 1996 ;[citado 2026 jan. 27 ]Vancouver
Alayo Chávez MI, Pereyra I. Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures. Proceedings. 1996 ;[citado 2026 jan. 27 ]
