Pavanello, Marcelo Antonio 
; Martino, João Antonio
Fonte: Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices. Nome do evento: Symposium Silicon-on-Insulator Technology and Devices. Unidade: EP
Assuntos: MICROELETRÔNICA, CIRCUITOS INTEGRADOS
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ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs. Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices. Tradução . Pennington: The Electrochemical Society, 1997. . . Acesso em: 17 nov. 2025.APA
Pavanello, M. A., & Martino, J. A. (1997). A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs. In Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices. Pennington: The Electrochemical Society.NLM
Pavanello MA, Martino JA. A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs. In: Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices. Pennington: The Electrochemical Society; 1997. [citado 2025 nov. 17 ]Vancouver
Pavanello MA, Martino JA. A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs. In: Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices. Pennington: The Electrochemical Society; 1997. [citado 2025 nov. 17 ]
