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Filtros : "Microlectronic Engineering" Limpar

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  • Artigo de periodico

    Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates (1998)

    Petitprez, E; González-Borrero, P P; Lubyshev, D I; Marega Júnior, Euclydes; Basmaji, Pierre

    Source: Microlectronic Engineering. Unidade: IFSC

    Assunto: MATÉRIA CONDENSADA

    Acesso à fonteDOIHow to cite
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    • ABNT

      PETITPREZ, E et al. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates. Microlectronic Engineering, v. 43, p. 59-65, 1998Tradução . . Disponível em: https://doi.org/10.1016/s0167-9317(98)00221-4. Acesso em: 18 set. 2024.

    • APA

      Petitprez, E., González-Borrero, P. P., Lubyshev, D. I., Marega Júnior, E., & Basmaji, P. (1998). Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates. Microlectronic Engineering, 43, 59-65. doi:10.1016/s0167-9317(98)00221-4

    • NLM

      Petitprez E, González-Borrero PP, Lubyshev DI, Marega Júnior E, Basmaji P. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates [Internet]. Microlectronic Engineering. 1998 ; 43 59-65.[citado 2024 set. 18 ] Available from: https://doi.org/10.1016/s0167-9317(98)00221-4

    • Vancouver

      Petitprez E, González-Borrero PP, Lubyshev DI, Marega Júnior E, Basmaji P. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates [Internet]. Microlectronic Engineering. 1998 ; 43 59-65.[citado 2024 set. 18 ] Available from: https://doi.org/10.1016/s0167-9317(98)00221-4

  • Artigo de periodico

    Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces (1998)

    Marega Júnior, Euclydes; Libardi, A L; Lubyshev, D I; González-Borrero, P P; Basmaji, Pierre

    Source: Microlectronic Engineering. Unidade: IFSC

    Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), SUPERFÍCIE FÍSICA

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      MAREGA JÚNIOR, Euclydes et al. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. Microlectronic Engineering, v. 43, p. 295-299, 1998Tradução . . Disponível em: https://doi.org/10.1016/s0167-9317(98)00177-4. Acesso em: 18 set. 2024.

    • APA

      Marega Júnior, E., Libardi, A. L., Lubyshev, D. I., González-Borrero, P. P., & Basmaji, P. (1998). Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. Microlectronic Engineering, 43, 295-299. doi:10.1016/s0167-9317(98)00177-4

    • NLM

      Marega Júnior E, Libardi AL, Lubyshev DI, González-Borrero PP, Basmaji P. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces [Internet]. Microlectronic Engineering. 1998 ; 43 295-299.[citado 2024 set. 18 ] Available from: https://doi.org/10.1016/s0167-9317(98)00177-4

    • Vancouver

      Marega Júnior E, Libardi AL, Lubyshev DI, González-Borrero PP, Basmaji P. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces [Internet]. Microlectronic Engineering. 1998 ; 43 295-299.[citado 2024 set. 18 ] Available from: https://doi.org/10.1016/s0167-9317(98)00177-4
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