Menu

Filtros : "Microlectronic Engineering" Limpar

Filtros

Refine with date range

  • 1

1 - 2 (2 records)

  • Artigo de periodico

    Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces (1998)

    Marega Junior, Euclydes ; Libardi, A L; Lubyshev, D I; González-Borrero, P P; Basmaji, Pierre

    Source: Microlectronic Engineering. Unidade: IFSC

    Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), SUPERFÍCIE FÍSICA

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      MAREGA JUNIOR, Euclydes et al. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. Microlectronic Engineering, v. 43, p. 295-299, 1998Tradução . . Disponível em: https://doi.org/10.1016/s0167-9317(98)00177-4. Acesso em: 19 mar. 2026.

    • APA

      Marega Junior, E., Libardi, A. L., Lubyshev, D. I., González-Borrero, P. P., & Basmaji, P. (1998). Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. Microlectronic Engineering, 43, 295-299. doi:10.1016/s0167-9317(98)00177-4

    • NLM

      Marega Junior E, Libardi AL, Lubyshev DI, González-Borrero PP, Basmaji P. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces [Internet]. Microlectronic Engineering. 1998 ; 43 295-299.[citado 2026 mar. 19 ] Available from: https://doi.org/10.1016/s0167-9317(98)00177-4

    • Vancouver

      Marega Junior E, Libardi AL, Lubyshev DI, González-Borrero PP, Basmaji P. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces [Internet]. Microlectronic Engineering. 1998 ; 43 295-299.[citado 2026 mar. 19 ] Available from: https://doi.org/10.1016/s0167-9317(98)00177-4

  • Artigo de periodico

    Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates (1998)

    Petitprez, E; González-Borrero, P P; Lubyshev, D I; Marega Junior, Euclydes ; Basmaji, Pierre

    Source: Microlectronic Engineering. Unidade: IFSC

    Assunto: MATÉRIA CONDENSADA

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      PETITPREZ, E et al. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates. Microlectronic Engineering, v. 43, p. 59-65, 1998Tradução . . Disponível em: https://doi.org/10.1016/s0167-9317(98)00221-4. Acesso em: 19 mar. 2026.

    • APA

      Petitprez, E., González-Borrero, P. P., Lubyshev, D. I., Marega Junior, E., & Basmaji, P. (1998). Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates. Microlectronic Engineering, 43, 59-65. doi:10.1016/s0167-9317(98)00221-4

    • NLM

      Petitprez E, González-Borrero PP, Lubyshev DI, Marega Junior E, Basmaji P. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates [Internet]. Microlectronic Engineering. 1998 ; 43 59-65.[citado 2026 mar. 19 ] Available from: https://doi.org/10.1016/s0167-9317(98)00221-4

    • Vancouver

      Petitprez E, González-Borrero PP, Lubyshev DI, Marega Junior E, Basmaji P. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates [Internet]. Microlectronic Engineering. 1998 ; 43 59-65.[citado 2026 mar. 19 ] Available from: https://doi.org/10.1016/s0167-9317(98)00221-4
  • 1

1 - 2 (2 records)

Digital Library of Intellectual Production of Universidade de São Paulo     2012 - 2026