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Artigo de periodico
Synergistic charge-transfer dynamics of rigid fused and unfused backbone with donors lead to promising photovoltaic properties of diazaborinine-based chromophores (2024)
khalid, Muhammad; Zafar, Maria; Shafiq, Iqra; Braga, Ataualpa Albert Carmo ; Haroon, Muhammad; Ahamad, Tansir
Source: Materials Science in Semiconductor Processing. Unidade: IQ
Assunto: CÉLULAS SOLARES
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ABNT
KHALID, Muhammad et al. Synergistic charge-transfer dynamics of rigid fused and unfused backbone with donors lead to promising photovoltaic properties of diazaborinine-based chromophores. Materials Science in Semiconductor Processing, v. 182, p. 1-16 art. 108695, 2024Tradução . . Disponível em: https://dx.doi.org/10.1016/j.mssp.2024.108695. Acesso em: 14 dez. 2025.
APA
khalid, M., Zafar, M., Shafiq, I., Braga, A. A. C., Haroon, M., & Ahamad, T. (2024). Synergistic charge-transfer dynamics of rigid fused and unfused backbone with donors lead to promising photovoltaic properties of diazaborinine-based chromophores. Materials Science in Semiconductor Processing, 182, 1-16 art. 108695. doi:10.1016/j.mssp.2024.108695
NLM
khalid M, Zafar M, Shafiq I, Braga AAC, Haroon M, Ahamad T. Synergistic charge-transfer dynamics of rigid fused and unfused backbone with donors lead to promising photovoltaic properties of diazaborinine-based chromophores [Internet]. Materials Science in Semiconductor Processing. 2024 ; 182 1-16 art. 108695.[citado 2025 dez. 14 ] Available from: https://dx.doi.org/10.1016/j.mssp.2024.108695
Vancouver
khalid M, Zafar M, Shafiq I, Braga AAC, Haroon M, Ahamad T. Synergistic charge-transfer dynamics of rigid fused and unfused backbone with donors lead to promising photovoltaic properties of diazaborinine-based chromophores [Internet]. Materials Science in Semiconductor Processing. 2024 ; 182 1-16 art. 108695.[citado 2025 dez. 14 ] Available from: https://dx.doi.org/10.1016/j.mssp.2024.108695
Artigo de periodico
Stabilizing the S-scheme ZnO/ZnCr2O4/Bi6Cr2O15 heterojunction through the application of carbon xerogel as both a solid-state mediator and reducing agent (2024)
Moraes, Nícolas Perciani de ; Oliveira, Matheus Fernandes de; Bacani, Rebeca ; Rocha, Robson da Silva ; Lanza, Marcos Roberto de Vasconcelos ; Rodrigues, Liana Alvares
Source: Materials Science in Semiconductor Processing. Unidades: EEL, IQSC
Subjects: FOTOCATÁLISE, ZINCO, BISMUTO
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ABNT
MORAES, Nícolas Perciani de et al. Stabilizing the S-scheme ZnO/ZnCr2O4/Bi6Cr2O15 heterojunction through the application of carbon xerogel as both a solid-state mediator and reducing agent. Materials Science in Semiconductor Processing, v. 177, p. 108412, 2024Tradução . . Disponível em: https://doi.org/10.1016/j.mssp.2024.108412. Acesso em: 14 dez. 2025.
APA
Moraes, N. P. de, Oliveira, M. F. de, Bacani, R., Rocha, R. da S., Lanza, M. R. de V., & Rodrigues, L. A. (2024). Stabilizing the S-scheme ZnO/ZnCr2O4/Bi6Cr2O15 heterojunction through the application of carbon xerogel as both a solid-state mediator and reducing agent. Materials Science in Semiconductor Processing, 177, 108412. doi:10.1016/j.mssp.2024.108412
NLM
Moraes NP de, Oliveira MF de, Bacani R, Rocha R da S, Lanza MR de V, Rodrigues LA. Stabilizing the S-scheme ZnO/ZnCr2O4/Bi6Cr2O15 heterojunction through the application of carbon xerogel as both a solid-state mediator and reducing agent [Internet]. Materials Science in Semiconductor Processing. 2024 ; 177 108412.[citado 2025 dez. 14 ] Available from: https://doi.org/10.1016/j.mssp.2024.108412
Vancouver
Moraes NP de, Oliveira MF de, Bacani R, Rocha R da S, Lanza MR de V, Rodrigues LA. Stabilizing the S-scheme ZnO/ZnCr2O4/Bi6Cr2O15 heterojunction through the application of carbon xerogel as both a solid-state mediator and reducing agent [Internet]. Materials Science in Semiconductor Processing. 2024 ; 177 108412.[citado 2025 dez. 14 ] Available from: https://doi.org/10.1016/j.mssp.2024.108412
Artigo de periodico
Molybdenum doping effect on sol-gel Nb2O5:Li+ thin films:: Investigation of structural, optical and electrochromic properties (2021)
Lemos, Rafaela M.J.; Balboni, Raphael D.C.; Cholant, Camila M.; Azevedo, Cristiane F.; Pawlicka, Agnieszka ; Gündel, André; Flores, Wladimir H.; Avellaneda, César O.
Source: Materials Science in Semiconductor Processing. Unidade: IQSC
Subjects: ELETROQUÍMICA, FILMES FINOS
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ABNT
LEMOS, Rafaela M.J. et al. Molybdenum doping effect on sol-gel Nb2O5:Li+ thin films:: Investigation of structural, optical and electrochromic properties. Materials Science in Semiconductor Processing, v. no 2021, p. 105995, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.mssp.2021.105995. Acesso em: 14 dez. 2025.
APA
Lemos, R. M. J., Balboni, R. D. C., Cholant, C. M., Azevedo, C. F., Pawlicka, A., Gündel, A., et al. (2021). Molybdenum doping effect on sol-gel Nb2O5:Li+ thin films:: Investigation of structural, optical and electrochromic properties. Materials Science in Semiconductor Processing, no 2021, 105995. doi:10.1016/j.mssp.2021.105995
NLM
Lemos RMJ, Balboni RDC, Cholant CM, Azevedo CF, Pawlicka A, Gündel A, Flores WH, Avellaneda CO. Molybdenum doping effect on sol-gel Nb2O5:Li+ thin films:: Investigation of structural, optical and electrochromic properties [Internet]. Materials Science in Semiconductor Processing. 2021 ; no 2021 105995.[citado 2025 dez. 14 ] Available from: https://doi.org/10.1016/j.mssp.2021.105995
Vancouver
Lemos RMJ, Balboni RDC, Cholant CM, Azevedo CF, Pawlicka A, Gündel A, Flores WH, Avellaneda CO. Molybdenum doping effect on sol-gel Nb2O5:Li+ thin films:: Investigation of structural, optical and electrochromic properties [Internet]. Materials Science in Semiconductor Processing. 2021 ; no 2021 105995.[citado 2025 dez. 14 ] Available from: https://doi.org/10.1016/j.mssp.2021.105995
Artigo de periodico
Segregation of phosphorus to Si'O IND.2'/Si(001) interfaces (2000)
Dabrowski, J.; Mussig, H. J.; Baierle, Rogerio Jose; Caldas, Marilia Junqueira ; Zavodinsky, V
Source: Materials Science in Semiconductor Processing. Unidade: IF
Assunto: ENGENHARIA ELÉTRICA
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ABNT
DABROWSKI, J. et al. Segregation of phosphorus to Si'O IND.2'/Si(001) interfaces. Materials Science in Semiconductor Processing, v. 3, n. 1-2, p. 85-89, 2000Tradução . . Acesso em: 14 dez. 2025.
APA
Dabrowski, J., Mussig, H. J., Baierle, R. J., Caldas, M. J., & Zavodinsky, V. (2000). Segregation of phosphorus to Si'O IND.2'/Si(001) interfaces. Materials Science in Semiconductor Processing, 3( 1-2), 85-89.
NLM
Dabrowski J, Mussig HJ, Baierle RJ, Caldas MJ, Zavodinsky V. Segregation of phosphorus to Si'O IND.2'/Si(001) interfaces. Materials Science in Semiconductor Processing. 2000 ; 3( 1-2): 85-89.[citado 2025 dez. 14 ]
Vancouver
Dabrowski J, Mussig HJ, Baierle RJ, Caldas MJ, Zavodinsky V. Segregation of phosphorus to Si'O IND.2'/Si(001) interfaces. Materials Science in Semiconductor Processing. 2000 ; 3( 1-2): 85-89.[citado 2025 dez. 14 ]

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