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Artigo de periodico
Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer (2009)
Albertin, Katia Franklin ; Pereyra, Inés
Source: Journal of Vacuum Science and Technology B. Unidade: EP
Assunto: DIELÉTRICOS
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ABNT
ALBERTIN, Katia Franklin e PEREYRA, Inés. Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer. Journal of Vacuum Science and Technology B, v. 27, n. ja/feb. 2009, p. 236-245, 2009Tradução . . Acesso em: 18 fev. 2026.
APA
Albertin, K. F., & Pereyra, I. (2009). Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer. Journal of Vacuum Science and Technology B, 27( ja/feb. 2009), 236-245.
NLM
Albertin KF, Pereyra I. Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer. Journal of Vacuum Science and Technology B. 2009 ; 27( ja/feb. 2009): 236-245.[citado 2026 fev. 18 ]
Vancouver
Albertin KF, Pereyra I. Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer. Journal of Vacuum Science and Technology B. 2009 ; 27( ja/feb. 2009): 236-245.[citado 2026 fev. 18 ]
Artigo de periodico
Novel method for measuring nanofriction by atomic force microscope (2008)
Salvadori, Maria Cecília Barbosa da Silveira ; Lisboa, F S; Fernandes, Fernando Massa; Brown, I G
Source: Journal of Vacuum Science and Technology B. Unidade: IF
Subjects: SUPERFÍCIE FÍSICA, FILMES FINOS
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ABNT
SALVADORI, Maria Cecília Barbosa da Silveira et al. Novel method for measuring nanofriction by atomic force microscope. Journal of Vacuum Science and Technology B, v. 26, n. 2, p. 643-650, 2008Tradução . . Disponível em: https://doi.org/10.1116/1.2890694. Acesso em: 18 fev. 2026.
APA
Salvadori, M. C. B. da S., Lisboa, F. S., Fernandes, F. M., & Brown, I. G. (2008). Novel method for measuring nanofriction by atomic force microscope. Journal of Vacuum Science and Technology B, 26( 2), 643-650. doi:10.1116/1.2890694
NLM
Salvadori MCB da S, Lisboa FS, Fernandes FM, Brown IG. Novel method for measuring nanofriction by atomic force microscope [Internet]. Journal of Vacuum Science and Technology B. 2008 ; 26( 2): 643-650.[citado 2026 fev. 18 ] Available from: https://doi.org/10.1116/1.2890694
Vancouver
Salvadori MCB da S, Lisboa FS, Fernandes FM, Brown IG. Novel method for measuring nanofriction by atomic force microscope [Internet]. Journal of Vacuum Science and Technology B. 2008 ; 26( 2): 643-650.[citado 2026 fev. 18 ] Available from: https://doi.org/10.1116/1.2890694
Artigo de periodico
Investigation of the electron emission from pores in a diamond porous membrane (2000)
Mammana, Victor Pellegrini; Anders, S; Monteiro, O R; Salvadori, Maria Cecília Barbosa da Silveira
Source: Journal of Vacuum Science and Technology B. Unidade: IF
Subjects: FÍSICA, PERFORMANCE
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ABNT
MAMMANA, Victor Pellegrini et al. Investigation of the electron emission from pores in a diamond porous membrane. Journal of Vacuum Science and Technology B, v. 18, n. 5, p. 2415-2419, 2000Tradução . . Disponível em: https://doi.org/10.1116/1.1288133. Acesso em: 18 fev. 2026.
APA
Mammana, V. P., Anders, S., Monteiro, O. R., & Salvadori, M. C. B. da S. (2000). Investigation of the electron emission from pores in a diamond porous membrane. Journal of Vacuum Science and Technology B, 18( 5), 2415-2419. doi:10.1116/1.1288133
NLM
Mammana VP, Anders S, Monteiro OR, Salvadori MCB da S. Investigation of the electron emission from pores in a diamond porous membrane [Internet]. Journal of Vacuum Science and Technology B. 2000 ; 18( 5): 2415-2419.[citado 2026 fev. 18 ] Available from: https://doi.org/10.1116/1.1288133
Vancouver
Mammana VP, Anders S, Monteiro OR, Salvadori MCB da S. Investigation of the electron emission from pores in a diamond porous membrane [Internet]. Journal of Vacuum Science and Technology B. 2000 ; 18( 5): 2415-2419.[citado 2026 fev. 18 ] Available from: https://doi.org/10.1116/1.1288133
Artigo de periodico
High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots (1996)
Lubyshev, D I; González-Borrero, P P; Marega Junior, Euclydes ; Petitprez, E; Basmaji, Pierre
Source: Journal of Vacuum Science and Technology B. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
LUBYSHEV, D I et al. High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots. Journal of Vacuum Science and Technology B, v. 14, n. 3 , p. 2212-5, 1996Tradução . . Acesso em: 18 fev. 2026.
APA
Lubyshev, D. I., González-Borrero, P. P., Marega Junior, E., Petitprez, E., & Basmaji, P. (1996). High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots. Journal of Vacuum Science and Technology B, 14( 3 ), 2212-5.
NLM
Lubyshev DI, González-Borrero PP, Marega Junior E, Petitprez E, Basmaji P. High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots. Journal of Vacuum Science and Technology B. 1996 ;14( 3 ): 2212-5.[citado 2026 fev. 18 ]
Vancouver
Lubyshev DI, González-Borrero PP, Marega Junior E, Petitprez E, Basmaji P. High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots. Journal of Vacuum Science and Technology B. 1996 ;14( 3 ): 2212-5.[citado 2026 fev. 18 ]
Artigo de periodico
Metal contamination of silicon wafers induced by reactive ion etching plasmas and its behavior upon subsequent cleaning procedures (1996)
Verdonck, Patrick Bernard; Hasenack, Claus Martin; Mansano, Ronaldo Domingues
Source: Journal of Vacuum Science and Technology B. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
VERDONCK, Patrick Bernard e HASENACK, Claus Martin e MANSANO, Ronaldo Domingues. Metal contamination of silicon wafers induced by reactive ion etching plasmas and its behavior upon subsequent cleaning procedures. Journal of Vacuum Science and Technology B, v. 14, n. 1 , p. 538-42, 1996Tradução . . Disponível em: https://doi.org/10.1116/1.588426. Acesso em: 18 fev. 2026.
APA
Verdonck, P. B., Hasenack, C. M., & Mansano, R. D. (1996). Metal contamination of silicon wafers induced by reactive ion etching plasmas and its behavior upon subsequent cleaning procedures. Journal of Vacuum Science and Technology B, 14( 1 ), 538-42. doi:10.1116/1.588426
NLM
Verdonck PB, Hasenack CM, Mansano RD. Metal contamination of silicon wafers induced by reactive ion etching plasmas and its behavior upon subsequent cleaning procedures [Internet]. Journal of Vacuum Science and Technology B. 1996 ;14( 1 ): 538-42.[citado 2026 fev. 18 ] Available from: https://doi.org/10.1116/1.588426
Vancouver
Verdonck PB, Hasenack CM, Mansano RD. Metal contamination of silicon wafers induced by reactive ion etching plasmas and its behavior upon subsequent cleaning procedures [Internet]. Journal of Vacuum Science and Technology B. 1996 ;14( 1 ): 538-42.[citado 2026 fev. 18 ] Available from: https://doi.org/10.1116/1.588426

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