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Artigo de periodico
Application of fluorine based plasma etching processes in microfluidic device fabrication (2000)
Mansano, Ronaldo Domingues ; Verdonck, Patrick Bernard; Simões, Eliphas Wagner; Furlan, Rogério
Source: Journal of Solid-State Devices and Circuits. Unidade: EP
Assunto: CIRCUITOS ELETRÔNICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MANSANO, Ronaldo Domingues et al. Application of fluorine based plasma etching processes in microfluidic device fabrication. Journal of Solid-State Devices and Circuits, v. 8, n. 1, p. 5-9, 2000Tradução . . Acesso em: 08 out. 2025.
APA
Mansano, R. D., Verdonck, P. B., Simões, E. W., & Furlan, R. (2000). Application of fluorine based plasma etching processes in microfluidic device fabrication. Journal of Solid-State Devices and Circuits, 8( 1), 5-9.
NLM
Mansano RD, Verdonck PB, Simões EW, Furlan R. Application of fluorine based plasma etching processes in microfluidic device fabrication. Journal of Solid-State Devices and Circuits. 2000 ; 8( 1): 5-9.[citado 2025 out. 08 ]
Vancouver
Mansano RD, Verdonck PB, Simões EW, Furlan R. Application of fluorine based plasma etching processes in microfluidic device fabrication. Journal of Solid-State Devices and Circuits. 2000 ; 8( 1): 5-9.[citado 2025 out. 08 ]
Artigo de periodico
Silicon surface roughness induced by SF6-based reactive ion etching processes for micromachining applications (1998)
Verdonck, Patrick Bernard; Mansano, Ronaldo Domingues ; Maciel, Homero Santiago; Salvadori, Maria Cecília Barbosa da Silveira
Source: Journal of Solid-State Devices and Circuits. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VERDONCK, Patrick Bernard et al. Silicon surface roughness induced by SF6-based reactive ion etching processes for micromachining applications. Journal of Solid-State Devices and Circuits, v. 6, n. 1, p. 1-6, 1998Tradução . . Acesso em: 08 out. 2025.
APA
Verdonck, P. B., Mansano, R. D., Maciel, H. S., & Salvadori, M. C. B. da S. (1998). Silicon surface roughness induced by SF6-based reactive ion etching processes for micromachining applications. Journal of Solid-State Devices and Circuits, 6( 1), 1-6.
NLM
Verdonck PB, Mansano RD, Maciel HS, Salvadori MCB da S. Silicon surface roughness induced by SF6-based reactive ion etching processes for micromachining applications. Journal of Solid-State Devices and Circuits. 1998 ; 6( 1): 1-6.[citado 2025 out. 08 ]
Vancouver
Verdonck PB, Mansano RD, Maciel HS, Salvadori MCB da S. Silicon surface roughness induced by SF6-based reactive ion etching processes for micromachining applications. Journal of Solid-State Devices and Circuits. 1998 ; 6( 1): 1-6.[citado 2025 out. 08 ]
Artigo de periodico
A 2.488 Gb/s 1:4/1:16 demultiplexer: an experience on the design of high-speed digital GaAs ICs (1996)
Correra, Fatima Salete ; Abrão, Taufik
Source: Journal of Solid-State Devices and Circuits. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CORRERA, Fatima Salete e ABRÃO, Taufik. A 2.488 Gb/s 1:4/1:16 demultiplexer: an experience on the design of high-speed digital GaAs ICs. Journal of Solid-State Devices and Circuits, v. 4 , n. ja 1996, p. 24-31, 1996Tradução . . Acesso em: 08 out. 2025.
APA
Correra, F. S., & Abrão, T. (1996). A 2.488 Gb/s 1:4/1:16 demultiplexer: an experience on the design of high-speed digital GaAs ICs. Journal of Solid-State Devices and Circuits, 4 ( ja 1996), 24-31.
NLM
Correra FS, Abrão T. A 2.488 Gb/s 1:4/1:16 demultiplexer: an experience on the design of high-speed digital GaAs ICs. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 24-31.[citado 2025 out. 08 ]
Vancouver
Correra FS, Abrão T. A 2.488 Gb/s 1:4/1:16 demultiplexer: an experience on the design of high-speed digital GaAs ICs. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 24-31.[citado 2025 out. 08 ]

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