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Filtros : "Journal Crystal Growth" Limpar

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  • Artigo de periodico

    p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant (1999)

    Quivy, A. A.; Sperandio, A. L.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.

    Source: Journal Crystal Growth. Unidade: IF

    Assunto: CRISTALOGRAFIA

    PrivadoAcesso à fonteDOIHow to cite
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    • ABNT

      QUIVY, A. A. et al. p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant. Journal Crystal Growth, v. 206, n. 3, p. 171-176, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(99)00325-5. Acesso em: 17 set. 2024.

    • APA

      Quivy, A. A., Sperandio, A. L., Silva, E. C. F. da, & Leite, J. R. (1999). p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant. Journal Crystal Growth, 206( 3), 171-176. doi:10.1016/s0022-0248(99)00325-5

    • NLM

      Quivy AA, Sperandio AL, Silva ECF da, Leite JR. p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant [Internet]. Journal Crystal Growth. 1999 ; 206( 3): 171-176.[citado 2024 set. 17 ] Available from: https://doi.org/10.1016/s0022-0248(99)00325-5

    • Vancouver

      Quivy AA, Sperandio AL, Silva ECF da, Leite JR. p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant [Internet]. Journal Crystal Growth. 1999 ; 206( 3): 171-176.[citado 2024 set. 17 ] Available from: https://doi.org/10.1016/s0022-0248(99)00325-5

  • Trabalho de evento-anais periodico

    Mapping of Bragg-surface diffraction of InP/GaAs (100) structure (1998)

    Avanci, L H; Hayashi, M A; Cardoso, L P; Morelhão, Sérgio Luiz; Riesz, F; Rakennus, K; Hakkarainen, T

    Source: Journal Crystal Growth. Conference titles: International Conference on Chemical Beam Epitaxy and Related Growth Techniques. Unidade: IF

    Assunto: CRISTALOGRAFIA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      AVANCI, L H et al. Mapping of Bragg-surface diffraction of InP/GaAs (100) structure. Journal Crystal Growth. Amsterdam: North-Holland. . Acesso em: 17 set. 2024. , 1998

    • APA

      Avanci, L. H., Hayashi, M. A., Cardoso, L. P., Morelhão, S. L., Riesz, F., Rakennus, K., & Hakkarainen, T. (1998). Mapping of Bragg-surface diffraction of InP/GaAs (100) structure. Journal Crystal Growth. Amsterdam: North-Holland.

    • NLM

      Avanci LH, Hayashi MA, Cardoso LP, Morelhão SL, Riesz F, Rakennus K, Hakkarainen T. Mapping of Bragg-surface diffraction of InP/GaAs (100) structure. Journal Crystal Growth. 1998 ; 188( 1-4): 220-224.[citado 2024 set. 17 ]

    • Vancouver

      Avanci LH, Hayashi MA, Cardoso LP, Morelhão SL, Riesz F, Rakennus K, Hakkarainen T. Mapping of Bragg-surface diffraction of InP/GaAs (100) structure. Journal Crystal Growth. 1998 ; 188( 1-4): 220-224.[citado 2024 set. 17 ]
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