Source: Indonesian Journal of Electrical Engineering and Computer Science. Unidade: EP
Subjects: DISPOSITIVOS ÓPTICOS, ÓPTICA, SEMICONDUTORES
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ABNT
YAURI, Ricardo e GAMERO SOBERO, Vanessa Julia e ALAYO CHÁVEZ, Marco Isaías. Characterization of the electrical properties of an optical device manufactured with CMOS 0.35 µm technology. Indonesian Journal of Electrical Engineering and Computer Science, v. 32, n. 3, p. 1346-1352, 2023Tradução . . Disponível em: http://doi.org/10.11591/ijeecs.v32.i3.pp1346-1352. Acesso em: 24 jan. 2026.APA
Yauri, R., Gamero Sobero, V. J., & Alayo Chávez, M. I. (2023). Characterization of the electrical properties of an optical device manufactured with CMOS 0.35 µm technology. Indonesian Journal of Electrical Engineering and Computer Science, 32( 3), 1346-1352. doi:10.11591/ijeecs.v32.i3.pp1346-1352NLM
Yauri R, Gamero Sobero VJ, Alayo Chávez MI. Characterization of the electrical properties of an optical device manufactured with CMOS 0.35 µm technology [Internet]. Indonesian Journal of Electrical Engineering and Computer Science. 2023 ; 32( 3): 1346-1352.[citado 2026 jan. 24 ] Available from: http://doi.org/10.11591/ijeecs.v32.i3.pp1346-1352Vancouver
Yauri R, Gamero Sobero VJ, Alayo Chávez MI. Characterization of the electrical properties of an optical device manufactured with CMOS 0.35 µm technology [Internet]. Indonesian Journal of Electrical Engineering and Computer Science. 2023 ; 32( 3): 1346-1352.[citado 2026 jan. 24 ] Available from: http://doi.org/10.11591/ijeecs.v32.i3.pp1346-1352
