Source: IEEE Transactions on Nanotechnology. Unidade: EESC
Subjects: MECÂNICA QUÂNTICA, MODELOS MATEMÁTICOS, MODELOS ANALÍTICOS, SEMICONDUTORES, NANOELETRÔNICA, TRANSISTORES
ABNT
RAGI, Regiane et al. An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs. IEEE Transactions on Nanotechnology, v. 15, n. 4, p. 627-634, 2016Tradução . . Disponível em: https://doi.org/10.1109/TNANO.2016.2567323. Acesso em: 30 jun. 2025.APA
Ragi, R., Nobrega, R. V. T. da, Duarte, U. R., & Romero, M. A. (2016). An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs. IEEE Transactions on Nanotechnology, 15( 4), 627-634. doi:10.1109/TNANO.2016.2567323NLM
Ragi R, Nobrega RVT da, Duarte UR, Romero MA. An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs [Internet]. IEEE Transactions on Nanotechnology. 2016 ; 15( 4): 627-634.[citado 2025 jun. 30 ] Available from: https://doi.org/10.1109/TNANO.2016.2567323Vancouver
Ragi R, Nobrega RVT da, Duarte UR, Romero MA. An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs [Internet]. IEEE Transactions on Nanotechnology. 2016 ; 15( 4): 627-634.[citado 2025 jun. 30 ] Available from: https://doi.org/10.1109/TNANO.2016.2567323