Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes (2012)
- Authors:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- DOI: 10.1109/TNANO.2011.2150760
- Assunto: FERROMAGNETISMO
- Language: Inglês
- Imprenta:
- Source:
- Título: IEEE Transactions on Nanotechnology
- Volume/Número/Paginação/Ano: v.11, n.1, p. 71-76, mai.2012
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
MIWA, R H e SCHMIDT, T M e FAZZIO, Adalberto. Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes. IEEE Transactions on Nanotechnology, v. 11, n. 1, p. 71-76, 2012Tradução . . Disponível em: https://doi.org/10.1109/TNANO.2011.2150760. Acesso em: 23 jan. 2026. -
APA
Miwa, R. H., Schmidt, T. M., & Fazzio, A. (2012). Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes. IEEE Transactions on Nanotechnology, 11( 1), 71-76. doi:10.1109/TNANO.2011.2150760 -
NLM
Miwa RH, Schmidt TM, Fazzio A. Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes [Internet]. IEEE Transactions on Nanotechnology. 2012 ;11( 1): 71-76.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1109/TNANO.2011.2150760 -
Vancouver
Miwa RH, Schmidt TM, Fazzio A. Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes [Internet]. IEEE Transactions on Nanotechnology. 2012 ;11( 1): 71-76.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1109/TNANO.2011.2150760 - Characteristic temperature of 2D materials
- Carrier-mediated magnetism in transition metal doped 'BI' IND. 2''SE' IND. 3' topological insulator
- Decreasing nanocrystal structural disorder by ligand exchange: an experimental and theoretical analysis
- First-principles study of 'HG''TE'/'CD''TE' heterostructures under perturbations preserving time-reversal symmetry
- Theoretical study of "NH IND.3" sensors based on "CN IND.x" nanotubes
- Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation
- Stacking fault effects in pure and n-type doped GaAs
- Transition-metal impurities in iii-v and ii-vi semiconductors
- Theory of interstitial transition atoms in gaas
- Correcao de auto-interacao na aproximacao da densidade funcional: ms-x'ALFA'
Informações sobre o DOI: 10.1109/TNANO.2011.2150760 (Fonte: oaDOI API)
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
 |
Tuning_Low-Spin_to_High-S... | Direct link |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
