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Artigo de periodico
Characterization of GaAs wire crystals grown on porous silicon by Raman scattering (1997)
Silva, S W da; Lubyshev, D I; Basmaji, Pierre; Pusep, Yuri A ; Pizani, Paulo Sérgio; Galzerani, J C; Katiyar, R S; Morell, G
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, S W da et al. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering. Journal of Applied Physics, v. 82, n. 12, p. 6247-6250, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.366511. Acesso em: 08 nov. 2024.
APA
Silva, S. W. da, Lubyshev, D. I., Basmaji, P., Pusep, Y. A., Pizani, P. S., Galzerani, J. C., et al. (1997). Characterization of GaAs wire crystals grown on porous silicon by Raman scattering. Journal of Applied Physics, 82( 12), 6247-6250. doi:10.1063/1.366511
NLM
Silva SW da, Lubyshev DI, Basmaji P, Pusep YA, Pizani PS, Galzerani JC, Katiyar RS, Morell G. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering [Internet]. Journal of Applied Physics. 1997 ; 82( 12): 6247-6250.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1063/1.366511
Vancouver
Silva SW da, Lubyshev DI, Basmaji P, Pusep YA, Pizani PS, Galzerani JC, Katiyar RS, Morell G. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering [Internet]. Journal of Applied Physics. 1997 ; 82( 12): 6247-6250.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1063/1.366511
Artigo de periodico
Formation and relaxation of poled order in dye doped polystyrene probed by isothermal and nonisothermal current measurements (1997)
Fedosov, S; Giacometti, José Alberto; Leal Ferreira, Guilherme Fontes; Costa, Mauro Miguel
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), DIELÉTRICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FEDOSOV, S et al. Formation and relaxation of poled order in dye doped polystyrene probed by isothermal and nonisothermal current measurements. Journal of Applied Physics, v. 82, n. 9, p. 4355-4361, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.366245. Acesso em: 08 nov. 2024.
APA
Fedosov, S., Giacometti, J. A., Leal Ferreira, G. F., & Costa, M. M. (1997). Formation and relaxation of poled order in dye doped polystyrene probed by isothermal and nonisothermal current measurements. Journal of Applied Physics, 82( 9), 4355-4361. doi:10.1063/1.366245
NLM
Fedosov S, Giacometti JA, Leal Ferreira GF, Costa MM. Formation and relaxation of poled order in dye doped polystyrene probed by isothermal and nonisothermal current measurements [Internet]. Journal of Applied Physics. 1997 ; 82( 9): 4355-4361.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1063/1.366245
Vancouver
Fedosov S, Giacometti JA, Leal Ferreira GF, Costa MM. Formation and relaxation of poled order in dye doped polystyrene probed by isothermal and nonisothermal current measurements [Internet]. Journal of Applied Physics. 1997 ; 82( 9): 4355-4361.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1063/1.366245
Artigo de periodico
Simple model for the dielectric constant of nanoscale silicon particle (1997)
Tsu, Raphael; Babic, Davorin; Ioriatti Júnior, Lidério Citrângulo
Fonte: Journal of Applied Physics. Unidade: IFSC
Assunto: DIELÉTRICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TSU, Raphael e BABIC, Davorin e IORIATTI JÚNIOR, Lidério Citrângulo. Simple model for the dielectric constant of nanoscale silicon particle. Journal of Applied Physics, v. 82, n. 3, p. 1327-1329, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.365762. Acesso em: 08 nov. 2024.
APA
Tsu, R., Babic, D., & Ioriatti Júnior, L. C. (1997). Simple model for the dielectric constant of nanoscale silicon particle. Journal of Applied Physics, 82( 3), 1327-1329. doi:10.1063/1.365762
NLM
Tsu R, Babic D, Ioriatti Júnior LC. Simple model for the dielectric constant of nanoscale silicon particle [Internet]. Journal of Applied Physics. 1997 ; 82( 3): 1327-1329.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1063/1.365762
Vancouver
Tsu R, Babic D, Ioriatti Júnior LC. Simple model for the dielectric constant of nanoscale silicon particle [Internet]. Journal of Applied Physics. 1997 ; 82( 3): 1327-1329.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1063/1.365762

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