Source: Mat Science Forum. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOMES, V M S e LEITE, J. R. Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon. Mat Science Forum. [S.l.]: Instituto de Física, Universidade de São Paulo. . Acesso em: 25 ago. 2024. , 1986APA
Gomes, V. M. S., & Leite, J. R. (1986). Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon. Mat Science Forum. Instituto de Física, Universidade de São Paulo.NLM
Gomes VMS, Leite JR. Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon. Mat Science Forum. 1986 ;10-2( pt.3): 905-10.[citado 2024 ago. 25 ]Vancouver
Gomes VMS, Leite JR. Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon. Mat Science Forum. 1986 ;10-2( pt.3): 905-10.[citado 2024 ago. 25 ]
