Caparroz, Luís Felipe Vicentis; Agopian, Paula Ghedini Der 
; Claeys, Cor ; Simoen, Eddy ; Bordallo, Caio Cesar Mendes ; Martino, João Antonio
Source: Semiconductor Science and Technology. Unidades: EP, EACH
Subjects: TEMPERATURA, SEMICONDUTORES
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CAPARROZ, Luís Felipe Vicentis et al. Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K. Semiconductor Science and Technology, v. 33, n. 6, p. 065003, 2018Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aabab3. Acesso em: 04 set. 2024.APA
Caparroz, L. F. V., Agopian, P. G. D., Claeys, C., Simoen, E., Bordallo, C. C. M., & Martino, J. A. (2018). Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K. Semiconductor Science and Technology, 33( 6), 065003. doi:10.1088/1361-6641/aabab3NLM
Caparroz LFV, Agopian PGD, Claeys C, Simoen E, Bordallo CCM, Martino JA. Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K [Internet]. Semiconductor Science and Technology. 2018 ; 33( 6): 065003.[citado 2024 set. 04 ] Available from: https://doi.org/10.1088/1361-6641/aabab3Vancouver
Caparroz LFV, Agopian PGD, Claeys C, Simoen E, Bordallo CCM, Martino JA. Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K [Internet]. Semiconductor Science and Technology. 2018 ; 33( 6): 065003.[citado 2024 set. 04 ] Available from: https://doi.org/10.1088/1361-6641/aabab3
