Source: Anais. Conference titles: Congresso da Sociedade Brasileira de Microeletronica. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
VERNDONCK, P B e DE GEYTER, P e SWART, Jacobus Willibrordus. Etching of tungsten in a magnetically confined plasma reactor: general trends and etch rate limiting mechanisms. 1993, Anais.. Campinas: Sbmicro, 1993. . Acesso em: 18 nov. 2024.APA
Verndonck, P. B., De Geyter, P., & Swart, J. W. (1993). Etching of tungsten in a magnetically confined plasma reactor: general trends and etch rate limiting mechanisms. In Anais. Campinas: Sbmicro.NLM
Verndonck PB, De Geyter P, Swart JW. Etching of tungsten in a magnetically confined plasma reactor: general trends and etch rate limiting mechanisms. Anais. 1993 ;[citado 2024 nov. 18 ]Vancouver
Verndonck PB, De Geyter P, Swart JW. Etching of tungsten in a magnetically confined plasma reactor: general trends and etch rate limiting mechanisms. Anais. 1993 ;[citado 2024 nov. 18 ]
