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Trabalho de evento-resumo
Electronic nose based on poly(3-hexylthiophene) thin-film transistors and chemical sensors for medical diagnosis (2014)
Cavallari, Marco Roberto ; Zanchin, Vinicius Ramos; Eirez Izquierdo, José Enrique ; Valle, Márcio de Almeida; Rodriguez, Eduardo Martin; Braga, Guilherme de Souza; Gonzalez Rodriguez, Estrella F; Dirani, Ely Antonio Tadeu ; Silva, Marcelo de Assumpção Pereira da ; Fonseca, Fernando Josepetti
Source: Program Book. Conference titles: Brazilian MRS Meeting. Unidades: EP, IFSC
Subjects: FILMES FINOS, TRANSISTORES, SENSORES BIOMÉDICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAVALLARI, Marco Roberto et al. Electronic nose based on poly(3-hexylthiophene) thin-film transistors and chemical sensors for medical diagnosis. 2014, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2014. . Acesso em: 04 nov. 2025.
APA
Cavallari, M. R., Zanchin, V. R., Eirez Izquierdo, J. E., Valle, M. de A., Rodriguez, E. M., Braga, G. de S., et al. (2014). Electronic nose based on poly(3-hexylthiophene) thin-film transistors and chemical sensors for medical diagnosis. In Program Book. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat.
NLM
Cavallari MR, Zanchin VR, Eirez Izquierdo JE, Valle M de A, Rodriguez EM, Braga G de S, Gonzalez Rodriguez EF, Dirani EAT, Silva M de AP da, Fonseca FJ. Electronic nose based on poly(3-hexylthiophene) thin-film transistors and chemical sensors for medical diagnosis. Program Book. 2014 ;[citado 2025 nov. 04 ]
Vancouver
Cavallari MR, Zanchin VR, Eirez Izquierdo JE, Valle M de A, Rodriguez EM, Braga G de S, Gonzalez Rodriguez EF, Dirani EAT, Silva M de AP da, Fonseca FJ. Electronic nose based on poly(3-hexylthiophene) thin-film transistors and chemical sensors for medical diagnosis. Program Book. 2014 ;[citado 2025 nov. 04 ]
Trabalho de evento-anais periodico
Effect of ethanol concentrations on few layer Schottky graphene transistors (2013)
Gomez Armas, Luis Enrique ; Gonzalez Huila, Manuel Fernando ; Pojar, Mariana ; Peres, Henrique Estanislau Maldonado ; Fernandes, F. J. R; Valle, Márcio de Almeida; Araki, Koiti ; Toma, Henrique Eisi ; Santos, Antonio Domingues dos; Seabra, Antonio Carlos
Source: Journal of Physics: Conference Series. Conference titles: Ibero-American Congress on Sensors (Ibersensor). Unidades: IQ, IF, EP
Subjects: NANOTECNOLOGIA, ETANOL
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOMEZ ARMAS, Luis Enrique et al. Effect of ethanol concentrations on few layer Schottky graphene transistors. Journal of Physics: Conference Series. Bristol: Instituto de Química, Universidade de São Paulo. Disponível em: https://doi.org/10.1088/1742-6596/421/1/012005. Acesso em: 04 nov. 2025. , 2013
APA
Gomez Armas, L. E., Gonzalez Huila, M. F., Pojar, M., Peres, H. E. M., Fernandes, F. J. R., Valle, M. de A., et al. (2013). Effect of ethanol concentrations on few layer Schottky graphene transistors. Journal of Physics: Conference Series. Bristol: Instituto de Química, Universidade de São Paulo. doi:10.1088/1742-6596/421/1/012005
NLM
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Fernandes FJR, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of ethanol concentrations on few layer Schottky graphene transistors [Internet]. Journal of Physics: Conference Series. 2013 ; 421 art. 012005 1-5.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1088/1742-6596/421/1/012005
Vancouver
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Fernandes FJR, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of ethanol concentrations on few layer Schottky graphene transistors [Internet]. Journal of Physics: Conference Series. 2013 ; 421 art. 012005 1-5.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1088/1742-6596/421/1/012005
Trabalho de evento-resumo
Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations (2012)
Gomez Armas, Luis Enrique ; Gonzalez Huila, Manuel Fernando ; Pojar, Mariana ; Peres, Henrique Estanislau Maldonado ; Ramírez Fernandez, Francisco Javier ; Valle, Márcio de Almeida; Araki, Koiti ; Toma, Henrique Eisi ; Santos, Antonio Domingues dos; Seabra, Antonio Carlos
Source: Anais. Conference titles: Brazilian MRS Meeting. Unidades: EP, IQ, IF
Assunto: NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOMEZ ARMAS, Luis Enrique et al. Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. 2012, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais (SBPMat), 2012. . Acesso em: 04 nov. 2025.
APA
Gomez Armas, L. E., Gonzalez Huila, M. F., Pojar, M., Peres, H. E. M., Ramírez Fernandez, F. J., Valle, M. de A., et al. (2012). Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. In Anais. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais (SBPMat).
NLM
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Ramírez Fernandez FJ, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. Anais. 2012 ;[citado 2025 nov. 04 ]
Vancouver
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Ramírez Fernandez FJ, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. Anais. 2012 ;[citado 2025 nov. 04 ]

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