Laser interference structuring of a-Ge films on GaAs (2002)
Santos, P V; Zanatta, Antonio Ricardo 
; Jahn, U; Trampert, A; Dondeo, F; Chambouleyron, Ivan
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA MOLECULAR
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ABNT
SANTOS, P V et al. Laser interference structuring of a-Ge films on GaAs. Journal of Applied Physics, v. 91, n. 5, p. 2916-2920, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1448674. Acesso em: 13 nov. 2024.APA
Santos, P. V., Zanatta, A. R., Jahn, U., Trampert, A., Dondeo, F., & Chambouleyron, I. (2002). Laser interference structuring of a-Ge films on GaAs. Journal of Applied Physics, 91( 5), 2916-2920. doi:10.1063/1.1448674NLM
Santos PV, Zanatta AR, Jahn U, Trampert A, Dondeo F, Chambouleyron I. Laser interference structuring of a-Ge films on GaAs [Internet]. Journal of Applied Physics. 2002 ;91( 5): 2916-2920.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.1448674Vancouver
Santos PV, Zanatta AR, Jahn U, Trampert A, Dondeo F, Chambouleyron I. Laser interference structuring of a-Ge films on GaAs [Internet]. Journal of Applied Physics. 2002 ;91( 5): 2916-2920.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.1448674
