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Artigo de periodico
Raman spectroscopy of GaSb1-xBix alloys with high Bi content (2020)
Souto, Sérgio Paulo Amaral; Gobato, Y. Galvão; Souza, D.; Andrade, Marcelo Barbosa de ; Koivusalo, E.; Puustinen, J.; Guina, M.
Source: Applied Physics Letters. Unidades: FZEA, IFSC
Subjects: ESPECTROSCOPIA RAMAN, POLÍMEROS (MATERIAIS)
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ABNT
SOUTO, Sérgio Paulo Amaral et al. Raman spectroscopy of GaSb1-xBix alloys with high Bi content. Applied Physics Letters, v. 116, n. 20, p. 202103-1-202103-5, 2020Tradução . . Disponível em: https://doi.org/10.1063/5.0008100. Acesso em: 08 nov. 2024.
APA
Souto, S. P. A., Gobato, Y. G., Souza, D., Andrade, M. B. de, Koivusalo, E., Puustinen, J., & Guina, M. (2020). Raman spectroscopy of GaSb1-xBix alloys with high Bi content. Applied Physics Letters, 116( 20), 202103-1-202103-5. doi:10.1063/5.0008100
NLM
Souto SPA, Gobato YG, Souza D, Andrade MB de, Koivusalo E, Puustinen J, Guina M. Raman spectroscopy of GaSb1-xBix alloys with high Bi content [Internet]. Applied Physics Letters. 2020 ; 116( 20): 202103-1-202103-5.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1063/5.0008100
Vancouver
Souto SPA, Gobato YG, Souza D, Andrade MB de, Koivusalo E, Puustinen J, Guina M. Raman spectroscopy of GaSb1-xBix alloys with high Bi content [Internet]. Applied Physics Letters. 2020 ; 116( 20): 202103-1-202103-5.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1063/5.0008100
Trabalho de evento
Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy (2017)
Piton, Marcelo Rizzo; Koivusalo, Eero; Suomalainen, Soile; Hakkarainen, Teemu; Souto, Sérgio Paulo Amaral; Galeti, Helder Vinícius Avanço; Schramm, Andreas; Gobato, Yara Galvao; Guina, Mircea
Source: Proceedings. Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: FZEA
Subjects: FÍSICA ÓPTICA, EPITAXIA POR FEIXE MOLECULAR, FOTOLUMINESCÊNCIA, ESPECTROSCOPIA RAMAN
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ABNT
PITON, Marcelo Rizzo et al. Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy. 2017, Anais.. Piscataway, NJ: IEEE, 2017. Disponível em: https://doi.org/10.1109/SBMicro.2017.8113028. Acesso em: 08 nov. 2024.
APA
Piton, M. R., Koivusalo, E., Suomalainen, S., Hakkarainen, T., Souto, S. P. A., Galeti, H. V. A., et al. (2017). Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy. In Proceedings. Piscataway, NJ: IEEE. doi:10.1109/SBMicro.2017.8113028
NLM
Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Galeti HVA, Schramm A, Gobato YG, Guina M. Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy [Internet]. Proceedings. 2017 ;[citado 2024 nov. 08 ] Available from: https://doi.org/10.1109/SBMicro.2017.8113028
Vancouver
Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Galeti HVA, Schramm A, Gobato YG, Guina M. Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy [Internet]. Proceedings. 2017 ;[citado 2024 nov. 08 ] Available from: https://doi.org/10.1109/SBMicro.2017.8113028
Artigo de periodico
Comparative study of single crystals and laser-grown films of 'V IND. 2''O IND. 5' (2002)
Janicskó-Csáthy, J.; Nagy, A.; Nánai, L.; Marine, W.; Souto, Sérgio Paulo Amaral; Balkanski, M.; George, Thomas F.
Source: Journal of Materials Research. Unidade: FZEA
Assunto: FÍSICA EXPERIMENTAL
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ABNT
JANICSKÓ-CSÁTHY, J. et al. Comparative study of single crystals and laser-grown films of 'V IND. 2''O IND. 5'. Journal of Materials Research, v. 17, n. 5, p. 1096-1101, 2002Tradução . . Acesso em: 08 nov. 2024.
APA
Janicskó-Csáthy, J., Nagy, A., Nánai, L., Marine, W., Souto, S. P. A., Balkanski, M., & George, T. F. (2002). Comparative study of single crystals and laser-grown films of 'V IND. 2''O IND. 5'. Journal of Materials Research, 17( 5), 1096-1101.
NLM
Janicskó-Csáthy J, Nagy A, Nánai L, Marine W, Souto SPA, Balkanski M, George TF. Comparative study of single crystals and laser-grown films of 'V IND. 2''O IND. 5'. Journal of Materials Research. 2002 ; 17( 5): 1096-1101.[citado 2024 nov. 08 ]
Vancouver
Janicskó-Csáthy J, Nagy A, Nánai L, Marine W, Souto SPA, Balkanski M, George TF. Comparative study of single crystals and laser-grown films of 'V IND. 2''O IND. 5'. Journal of Materials Research. 2002 ; 17( 5): 1096-1101.[citado 2024 nov. 08 ]
Artigo de periodico
Electronic structure of nitrogen-carbon alloys (a-CNx) determined by photoelectron spectroscopy (1998)
Souto, Sérgio Paulo Amaral; Pickholz, M; Santos, M C dos; Alvarez, F
Source: Physical Review B. Unidade: FZEA
Assunto: ESTRUTURA MOLECULAR (FÍSICA MODERNA)
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ABNT
SOUTO, Sérgio Paulo Amaral et al. Electronic structure of nitrogen-carbon alloys (a-CNx) determined by photoelectron spectroscopy. Physical Review B, v. 57, n. 4, p. 2536-2540, 1998Tradução . . Disponível em: https://doi.org/10.1103/physrevb.57.2536. Acesso em: 08 nov. 2024.
APA
Souto, S. P. A., Pickholz, M., Santos, M. C. dos, & Alvarez, F. (1998). Electronic structure of nitrogen-carbon alloys (a-CNx) determined by photoelectron spectroscopy. Physical Review B, 57( 4), 2536-2540. doi:10.1103/physrevb.57.2536
NLM
Souto SPA, Pickholz M, Santos MC dos, Alvarez F. Electronic structure of nitrogen-carbon alloys (a-CNx) determined by photoelectron spectroscopy [Internet]. Physical Review B. 1998 ; 57( 4): 2536-2540.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1103/physrevb.57.2536
Vancouver
Souto SPA, Pickholz M, Santos MC dos, Alvarez F. Electronic structure of nitrogen-carbon alloys (a-CNx) determined by photoelectron spectroscopy [Internet]. Physical Review B. 1998 ; 57( 4): 2536-2540.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1103/physrevb.57.2536

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