Source: Materials Science and Engineering B. Unidade: IF
Assunto: FÍSICA DA MATÉRIA CONDENSADA
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ABNT
STOJANOFF, Vivian et al. Influence of growth conditions on properties of inp homoepitaxial layers grown by liquid phase epitaxy. Materials Science and Engineering B, v. 3 , n. 3 , p. 279-85, 1989Tradução . . Disponível em: https://doi.org/10.1016/0921-5107(89)90022-6. Acesso em: 19 nov. 2024.APA
Stojanoff, V., Shahid, M. A., Mcdevitt, T. L., Mahajan, S., Schlesinger, T. E., & Bonner, W. A. (1989). Influence of growth conditions on properties of inp homoepitaxial layers grown by liquid phase epitaxy. Materials Science and Engineering B, 3 ( 3 ), 279-85. doi:10.1016/0921-5107(89)90022-6NLM
Stojanoff V, Shahid MA, Mcdevitt TL, Mahajan S, Schlesinger TE, Bonner WA. Influence of growth conditions on properties of inp homoepitaxial layers grown by liquid phase epitaxy [Internet]. Materials Science and Engineering B. 1989 ;3 ( 3 ): 279-85.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1016/0921-5107(89)90022-6Vancouver
Stojanoff V, Shahid MA, Mcdevitt TL, Mahajan S, Schlesinger TE, Bonner WA. Influence of growth conditions on properties of inp homoepitaxial layers grown by liquid phase epitaxy [Internet]. Materials Science and Engineering B. 1989 ;3 ( 3 ): 279-85.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1016/0921-5107(89)90022-6
