Study of proton radiation effects among diamond and rectangular gate MOSFET layouts (2017)
Source: Materials Research Express. Unidade: IF
Subjects: FÍSICA NUCLEAR, RADIAÇÃO IONIZANTE
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SEIXAS JUNIOR, Luis Eduardo et al. Study of proton radiation effects among diamond and rectangular gate MOSFET layouts. Materials Research Express, v. 4, n. ja, p. 015901, 2017Tradução . . Disponível em: http://iopscience.iop.org/article/10.1088/2053-1591/4/1/015901. Acesso em: 04 nov. 2024.APA
Seixas Junior, L. E., S Finco1,, Silveira, M. A. G. da, Medina, N. H., & Gimenez, S. P. (2017). Study of proton radiation effects among diamond and rectangular gate MOSFET layouts. Materials Research Express, 4( ja), 015901. doi:10.1088/2053-1591/4/1/015901NLM
Seixas Junior LE, S Finco1, Silveira MAG da, Medina NH, Gimenez SP. Study of proton radiation effects among diamond and rectangular gate MOSFET layouts [Internet]. Materials Research Express. 2017 ; 4( ja): 015901.[citado 2024 nov. 04 ] Available from: http://iopscience.iop.org/article/10.1088/2053-1591/4/1/015901Vancouver
Seixas Junior LE, S Finco1, Silveira MAG da, Medina NH, Gimenez SP. Study of proton radiation effects among diamond and rectangular gate MOSFET layouts [Internet]. Materials Research Express. 2017 ; 4( ja): 015901.[citado 2024 nov. 04 ] Available from: http://iopscience.iop.org/article/10.1088/2053-1591/4/1/015901
