Study of proton radiation effects among diamond and rectangular gate MOSFET layouts (2017)
- Authors:
- Autor USP: MEDINA, NILBERTO HEDER - IF
- Unidade: IF
- DOI: 10.1088/2053-1591/4/1/015901
- Subjects: FÍSICA NUCLEAR; RADIAÇÃO IONIZANTE
- Language: Inglês
- Imprenta:
- Source:
- Título: Materials Research Express
- ISSN: 2053-1591
- Volume/Número/Paginação/Ano: v. 4, n. 1, jan., p. 015901, 2017
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
SEIXAS JUNIOR, Luis Eduardo et al. Study of proton radiation effects among diamond and rectangular gate MOSFET layouts. Materials Research Express, v. 4, n. ja, p. 015901, 2017Tradução . . Disponível em: http://iopscience.iop.org/article/10.1088/2053-1591/4/1/015901. Acesso em: 11 out. 2024. -
APA
Seixas Junior, L. E., S Finco1,, Silveira, M. A. G. da, Medina, N. H., & Gimenez, S. P. (2017). Study of proton radiation effects among diamond and rectangular gate MOSFET layouts. Materials Research Express, 4( ja), 015901. doi:10.1088/2053-1591/4/1/015901 -
NLM
Seixas Junior LE, S Finco1, Silveira MAG da, Medina NH, Gimenez SP. Study of proton radiation effects among diamond and rectangular gate MOSFET layouts [Internet]. Materials Research Express. 2017 ; 4( ja): 015901.[citado 2024 out. 11 ] Available from: http://iopscience.iop.org/article/10.1088/2053-1591/4/1/015901 -
Vancouver
Seixas Junior LE, S Finco1, Silveira MAG da, Medina NH, Gimenez SP. Study of proton radiation effects among diamond and rectangular gate MOSFET layouts [Internet]. Materials Research Express. 2017 ; 4( ja): 015901.[citado 2024 out. 11 ] Available from: http://iopscience.iop.org/article/10.1088/2053-1591/4/1/015901 - Stopping power of 'Nd'ions in 'Pb'determined from 'gama-ray' lineshape analysis in coulomb excitation
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Informações sobre o DOI: 10.1088/2053-1591/4/1/015901 (Fonte: oaDOI API)
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