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Filtros : "Scolfaro, Luisa Maria Ribeiro" "Journal of Physics-Condensed Matter" Removido: "Dissertação (Mestrado)" Limpar

Filtros

Artigo de periodico
Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures (2002)
Rodrigues, S. C. P.; Sipahi, Guilherme Matos ; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Journal of Physics-Condensed Matter. Unidades: IFSC, IF
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RODRIGUES, S. C. P. et al. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures. Journal of Physics-Condensed Matter, v. 14, n. 23, p. 5813-5827, 2002Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/14/23/312. Acesso em: 04 nov. 2024.
APA
Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2002). Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures. Journal of Physics-Condensed Matter, 14( 23), 5813-5827. doi:10.1088/0953-8984/14/23/312
NLM
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures [Internet]. Journal of Physics-Condensed Matter. 2002 ; 14( 23): 5813-5827.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1088/0953-8984/14/23/312
Vancouver
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures [Internet]. Journal of Physics-Condensed Matter. 2002 ; 14( 23): 5813-5827.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1088/0953-8984/14/23/312
Artigo de periodico
Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.X' 'Ga IND.1-X' N/GaN superlattices (2001)
Rodrigues, S C P; Sipahi, Guilherme Matos ; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Journal of Physics-Condensed Matter. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RODRIGUES, S C P et al. Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.X' 'Ga IND.1-X' N/GaN superlattices. Journal of Physics-Condensed Matter, v. 13, n. 14, p. 3381-3387, 2001Tradução . . Disponível em: http://www.iop.org/EJ3-Links/35/zzLGssKIC,HW1qAP6barow/c11411.pdf. Acesso em: 04 nov. 2024.
APA
Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2001). Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.X' 'Ga IND.1-X' N/GaN superlattices. Journal of Physics-Condensed Matter, 13( 14), 3381-3387. Recuperado de http://www.iop.org/EJ3-Links/35/zzLGssKIC,HW1qAP6barow/c11411.pdf
NLM
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.X' 'Ga IND.1-X' N/GaN superlattices [Internet]. Journal of Physics-Condensed Matter. 2001 ; 13( 14): 3381-3387.[citado 2024 nov. 04 ] Available from: http://www.iop.org/EJ3-Links/35/zzLGssKIC,HW1qAP6barow/c11411.pdf
Vancouver
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.X' 'Ga IND.1-X' N/GaN superlattices [Internet]. Journal of Physics-Condensed Matter. 2001 ; 13( 14): 3381-3387.[citado 2024 nov. 04 ] Available from: http://www.iop.org/EJ3-Links/35/zzLGssKIC,HW1qAP6barow/c11411.pdf

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