Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate (1999)
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: ENGENHARIA MECÂNICA
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TABATA, A. et al. Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate. Semiconductor Science and Technology, v. 14, n. 4, p. 318-322, 1999Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/14/4/005. Acesso em: 01 nov. 2025.APA
Tabata, A., Lima, A. P., Leite, J. R., Lemos, V., Schikora, D., Schottker, B., et al. (1999). Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate. Semiconductor Science and Technology, 14( 4), 318-322. doi:10.1088/0268-1242/14/4/005NLM
Tabata A, Lima AP, Leite JR, Lemos V, Schikora D, Schottker B, Kohler U, As DJ, Lischka K. Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate [Internet]. Semiconductor Science and Technology. 1999 ; 14( 4): 318-322.[citado 2025 nov. 01 ] Available from: https://doi.org/10.1088/0268-1242/14/4/005Vancouver
Tabata A, Lima AP, Leite JR, Lemos V, Schikora D, Schottker B, Kohler U, As DJ, Lischka K. Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate [Internet]. Semiconductor Science and Technology. 1999 ; 14( 4): 318-322.[citado 2025 nov. 01 ] Available from: https://doi.org/10.1088/0268-1242/14/4/005
