Source: Solid State Communications. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, LASER, FOTOLUMINESCÊNCIA
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RUDNO-RUDZINSKI, et al. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m. Solid State Communications, v. 135, n. 4, p. 232-236, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2005.04.030. Acesso em: 10 out. 2024.APA
Rudno-Rudzinski,, Ryczko, K., Sek, G., Misiewicz, J., Silva, M. J. da, & Quivy, A. A. (2005). Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m. Solid State Communications, 135( 4), 232-236. doi:10.1016/j.ssc.2005.04.030NLM
Rudno-Rudzinski, Ryczko K, Sek G, Misiewicz J, Silva MJ da, Quivy AA. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m [Internet]. Solid State Communications. 2005 ; 135( 4): 232-236.[citado 2024 out. 10 ] Available from: https://doi.org/10.1016/j.ssc.2005.04.030Vancouver
Rudno-Rudzinski, Ryczko K, Sek G, Misiewicz J, Silva MJ da, Quivy AA. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m [Internet]. Solid State Communications. 2005 ; 135( 4): 232-236.[citado 2024 out. 10 ] Available from: https://doi.org/10.1016/j.ssc.2005.04.030
