Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: DISPOSITIVOS ELETRÔNICOS, TRANSISTORES, MICROELETRÔNICA
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RIBEIRO, Arllen D.R et al. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302575. Acesso em: 07 out. 2024.APA
Ribeiro, A. D. R., Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2023). Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302575NLM
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET [Internet]. SBMicro. 2023 ;[citado 2024 out. 07 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302575Vancouver
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET [Internet]. SBMicro. 2023 ;[citado 2024 out. 07 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302575