Filtros : "Pereyra, Inés" "Alemanha" Removido: "2007" Limpar

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  • Source: Brazilian Journal of Chemical Engineering. Unidades: EP, IF

    Assunto: FLUORESCÊNCIA

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    • ABNT

      SOARES, Marco C P et al. Fabrication of fluorescent PMMA-carbon nanodots optical films and their feasibility in improving solar cells efficiency using low-cost sustainable materials. Brazilian Journal of Chemical Engineering, 2023Tradução . . Disponível em: https://doi.org/10.1007/s43153-023-00408-w. Acesso em: 05 out. 2024.
    • APA

      Soares, M. C. P., Carreño, M. N. P., Pereyra, I., Ramos, C. A. S., Cid Sánchez, M., Goveia, G. S., & Chubaci, J. F. D. (2023). Fabrication of fluorescent PMMA-carbon nanodots optical films and their feasibility in improving solar cells efficiency using low-cost sustainable materials. Brazilian Journal of Chemical Engineering. doi:10.1007/s43153-023-00408-w
    • NLM

      Soares MCP, Carreño MNP, Pereyra I, Ramos CAS, Cid Sánchez M, Goveia GS, Chubaci JFD. Fabrication of fluorescent PMMA-carbon nanodots optical films and their feasibility in improving solar cells efficiency using low-cost sustainable materials [Internet]. Brazilian Journal of Chemical Engineering. 2023 ;[citado 2024 out. 05 ] Available from: https://doi.org/10.1007/s43153-023-00408-w
    • Vancouver

      Soares MCP, Carreño MNP, Pereyra I, Ramos CAS, Cid Sánchez M, Goveia GS, Chubaci JFD. Fabrication of fluorescent PMMA-carbon nanodots optical films and their feasibility in improving solar cells efficiency using low-cost sustainable materials [Internet]. Brazilian Journal of Chemical Engineering. 2023 ;[citado 2024 out. 05 ] Available from: https://doi.org/10.1007/s43153-023-00408-w
  • Source: Physica Status Solidi (C). Unidade: EP

    Subjects: FILMES FINOS, SEMICONDUTORES, DIELÉTRICOS

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    • ABNT

      ALBERTIN, Katia Franklin e PEREYRA, Inés. Study of metal-oxide-semiconductor capacitors with r.f. magnetron sputtering TiOxNy films dielectric layer. Physica Status Solidi (C), v. 7, n. 3-4, p. 937-940, 2010Tradução . . Disponível em: https://doi.org/10.1002/pssc.200982656. Acesso em: 05 out. 2024.
    • APA

      Albertin, K. F., & Pereyra, I. (2010). Study of metal-oxide-semiconductor capacitors with r.f. magnetron sputtering TiOxNy films dielectric layer. Physica Status Solidi (C), 7( 3-4), 937-940. doi:10.1002/pssc.200982656
    • NLM

      Albertin KF, Pereyra I. Study of metal-oxide-semiconductor capacitors with r.f. magnetron sputtering TiOxNy films dielectric layer [Internet]. Physica Status Solidi (C). 2010 ; 7( 3-4): 937-940.[citado 2024 out. 05 ] Available from: https://doi.org/10.1002/pssc.200982656
    • Vancouver

      Albertin KF, Pereyra I. Study of metal-oxide-semiconductor capacitors with r.f. magnetron sputtering TiOxNy films dielectric layer [Internet]. Physica Status Solidi (C). 2010 ; 7( 3-4): 937-940.[citado 2024 out. 05 ] Available from: https://doi.org/10.1002/pssc.200982656
  • Source: Physica Status Solidi C. Unidade: EP

    Subjects: FILMES FINOS, SEMICONDUTORES, METAIS, PROCESSOS DE MICROELETRÔNICA, SISTEMAS MICROELETROMECÂNICOS

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    • ABNT

      OLIVEIRA, Alessandro Ricardo e PEREYRA, Inés e PÁEZ CARREÑO, Marcelo Nelson. A study of metal contact properties on thermal annealed PECVD SiC thin films for MEMS applications. Physica Status Solidi C, v. 7, n. 3/4, p. 793-796, 2010Tradução . . Disponível em: https://doi.org/10.1002/pssc.200982839. Acesso em: 05 out. 2024.
    • APA

      Oliveira, A. R., Pereyra, I., & Páez Carreño, M. N. (2010). A study of metal contact properties on thermal annealed PECVD SiC thin films for MEMS applications. Physica Status Solidi C, 7( 3/4), 793-796. doi:10.1002/pssc.200982839
    • NLM

      Oliveira AR, Pereyra I, Páez Carreño MN. A study of metal contact properties on thermal annealed PECVD SiC thin films for MEMS applications [Internet]. Physica Status Solidi C. 2010 ; 7( 3/4): 793-796.[citado 2024 out. 05 ] Available from: https://doi.org/10.1002/pssc.200982839
    • Vancouver

      Oliveira AR, Pereyra I, Páez Carreño MN. A study of metal contact properties on thermal annealed PECVD SiC thin films for MEMS applications [Internet]. Physica Status Solidi C. 2010 ; 7( 3/4): 793-796.[citado 2024 out. 05 ] Available from: https://doi.org/10.1002/pssc.200982839
  • Source: Surface Science. Unidade: EP

    Assunto: CÉLULAS SOLARES

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    • ABNT

      PÁEZ CARREÑO, Marcelo Nelson e PEREYRA, Inés. Photocurrent oscillations in a-sic: h double barrier devices exhibiting negative differential resistance. Surface Science. Tradução . Berlin: Springer, 1991. . . Acesso em: 05 out. 2024.
    • APA

      Páez Carreño, M. N., & Pereyra, I. (1991). Photocurrent oscillations in a-sic: h double barrier devices exhibiting negative differential resistance. In Surface Science. Berlin: Springer.
    • NLM

      Páez Carreño MN, Pereyra I. Photocurrent oscillations in a-sic: h double barrier devices exhibiting negative differential resistance. In: Surface Science. Berlin: Springer; 1991. [citado 2024 out. 05 ]
    • Vancouver

      Páez Carreño MN, Pereyra I. Photocurrent oscillations in a-sic: h double barrier devices exhibiting negative differential resistance. In: Surface Science. Berlin: Springer; 1991. [citado 2024 out. 05 ]
  • Source: Proceedings. Conference titles: Photovoltaic Solar Energy Conference. Unidade: EP

    Subjects: ENERGIA, DISPOSITIVOS ELETRÔNICOS

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      DIRANI, Ely Antonio Tadeu e ANDRADE, Adnei Melges de e PEREYRA, Inés. Characterization of highly conductive phosphorous doped Mc-Si films. 1991, Anais.. Dordrecht: Kluwer Academic, 1991. . Acesso em: 05 out. 2024.
    • APA

      Dirani, E. A. T., Andrade, A. M. de, & Pereyra, I. (1991). Characterization of highly conductive phosphorous doped Mc-Si films. In Proceedings. Dordrecht: Kluwer Academic.
    • NLM

      Dirani EAT, Andrade AM de, Pereyra I. Characterization of highly conductive phosphorous doped Mc-Si films. Proceedings. 1991 ;[citado 2024 out. 05 ]
    • Vancouver

      Dirani EAT, Andrade AM de, Pereyra I. Characterization of highly conductive phosphorous doped Mc-Si films. Proceedings. 1991 ;[citado 2024 out. 05 ]
  • Source: Surface Science. Unidade: EP

    Assunto: CÉLULAS SOLARES

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    • ABNT

      PEREYRA, Inés e PÁEZ CARREÑO, Marcelo Nelson e ANDRADE, Adnei Melges de. Tfts an a sicx: h insulator layer. Surface Science. Tradução . Berlin: Springer, 1991. . . Acesso em: 05 out. 2024.
    • APA

      Pereyra, I., Páez Carreño, M. N., & Andrade, A. M. de. (1991). Tfts an a sicx: h insulator layer. In Surface Science. Berlin: Springer.
    • NLM

      Pereyra I, Páez Carreño MN, Andrade AM de. Tfts an a sicx: h insulator layer. In: Surface Science. Berlin: Springer; 1991. [citado 2024 out. 05 ]
    • Vancouver

      Pereyra I, Páez Carreño MN, Andrade AM de. Tfts an a sicx: h insulator layer. In: Surface Science. Berlin: Springer; 1991. [citado 2024 out. 05 ]
  • Source: Proceedings. Conference titles: E C Photovoltaic Solar Energy Conference. Unidade: EP

    Assunto: CÉLULAS SOLARES

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      SOLER PAJANIAN, Maria Aparecida Godoy e PEREYRA, Inés e ANDRADE, Adnei Melges de. Backside hydrogenation on semicrystalline silicon solar cells by RF plasma. 1989, Anais.. Dordrecht: Kluwer, 1989. . Acesso em: 05 out. 2024.
    • APA

      Soler Pajanian, M. A. G., Pereyra, I., & Andrade, A. M. de. (1989). Backside hydrogenation on semicrystalline silicon solar cells by RF plasma. In Proceedings. Dordrecht: Kluwer.
    • NLM

      Soler Pajanian MAG, Pereyra I, Andrade AM de. Backside hydrogenation on semicrystalline silicon solar cells by RF plasma. Proceedings. 1989 ;[citado 2024 out. 05 ]
    • Vancouver

      Soler Pajanian MAG, Pereyra I, Andrade AM de. Backside hydrogenation on semicrystalline silicon solar cells by RF plasma. Proceedings. 1989 ;[citado 2024 out. 05 ]

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