Santos, Tiago G.; Vieira, Gustavo S.; Delfino, Cristian A.; Tanaka, Roberto Y.; Abe, Nancy M.; Passaro, Angelo; Fernandes, Fernando M.; Quivy, Alain A. 
Fonte: Sensors and Actuators A: Physical. Unidade: IF
Assuntos: EPITAXIA POR FEIXE MOLECULAR, SEMICONDUTIVIDADE, FÍSICA MODERNA, FOTODETECTORES, RADIAÇÃO INFRAVERMELHA, POÇOS QUÂNTICOS
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SANTOS, Tiago G. et al. Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer. Sensors and Actuators A: Physical, v. 301, 2020Tradução . . Disponível em: https://doi.org/10.1016/j.sna.2019.111725. Acesso em: 02 nov. 2024.APA
Santos, T. G., Vieira, G. S., Delfino, C. A., Tanaka, R. Y., Abe, N. M., Passaro, A., et al. (2020). Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer. Sensors and Actuators A: Physical, 301. doi:10.1016/j.sna.2019.111725NLM
Santos TG, Vieira GS, Delfino CA, Tanaka RY, Abe NM, Passaro A, Fernandes FM, Quivy AA. Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer [Internet]. Sensors and Actuators A: Physical. 2020 ; 301[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/j.sna.2019.111725Vancouver
Santos TG, Vieira GS, Delfino CA, Tanaka RY, Abe NM, Passaro A, Fernandes FM, Quivy AA. Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer [Internet]. Sensors and Actuators A: Physical. 2020 ; 301[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/j.sna.2019.111725
