Source: Resumos. Conference titles: Encontro Nacional de Fisica da Matéria Condensada. Unidades: EP, IF
Assunto: MATÉRIA CONDENSADA
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PAGNOSSIN, I. R et al. The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells. 2004, Anais.. São Paulo: SBF, 2004. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1061-1.pdf. Acesso em: 08 out. 2024.APA
Pagnossin, I. R., Silva, E. C. N., Quivy, A. A., Martini, S., Sergio, C. S., & Leite, J. R. (2004). The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells. In Resumos. São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1061-1.pdfNLM
Pagnossin IR, Silva ECN, Quivy AA, Martini S, Sergio CS, Leite JR. The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells [Internet]. Resumos. 2004 ;[citado 2024 out. 08 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1061-1.pdfVancouver
Pagnossin IR, Silva ECN, Quivy AA, Martini S, Sergio CS, Leite JR. The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells [Internet]. Resumos. 2004 ;[citado 2024 out. 08 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1061-1.pdf