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Filtros : "Páez Carreño, Marcelo Nelson" "International Symposium on Microelectronics Technology and Devices" Removido: "2003" Limpar

Filtros

Trabalho de evento
Simulation of PECVD SiO2 deposition using a cellular automata approach (2012)
Colombo, Fábio Belotti; Páez Carreño, Marcelo Nelson
Fonte: Microelectronics technology and devices, SBMicro. Nome do evento: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
COLOMBO, Fábio Belotti e PÁEZ CARREÑO, Marcelo Nelson. Simulation of PECVD SiO2 deposition using a cellular automata approach. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0297ecst. Acesso em: 02 jul. 2024.
APA
Colombo, F. B., & Páez Carreño, M. N. (2012). Simulation of PECVD SiO2 deposition using a cellular automata approach. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0297ecst
NLM
Colombo FB, Páez Carreño MN. Simulation of PECVD SiO2 deposition using a cellular automata approach [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 jul. 02 ] Available from: https://doi.org/10.1149/04901.0297ecst
Vancouver
Colombo FB, Páez Carreño MN. Simulation of PECVD SiO2 deposition using a cellular automata approach [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 jul. 02 ] Available from: https://doi.org/10.1149/04901.0297ecst
Parte de monografia/livro
3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures (2002)
Páez Carreño, Marcelo Nelson ; Lopes, Alexandre Tavares; Alayo Chávez, Marco Isaías ; Pereyra, Inés
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PÁEZ CARREÑO, Marcelo Nelson et al. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 02 jul. 2024.
APA
Páez Carreño, M. N., Lopes, A. T., Alayo Chávez, M. I., & Pereyra, I. (2002). 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 jul. 02 ]
Vancouver
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 jul. 02 ]

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