Polycrystallization of a-SiC:H layers by excimer laser annealing for TFT fabrication (2005)
Garcia, B.; Estrada, M.; Albertin, Katia Franklin 
; Páez Carreño, Marcelo Nelson
Fonte: Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GARCIA, B. et al. Polycrystallization of a-SiC:H layers by excimer laser annealing for TFT fabrication. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 01 nov. 2024.APA
Garcia, B., Estrada, M., Albertin, K. F., & Páez Carreño, M. N. (2005). Polycrystallization of a-SiC:H layers by excimer laser annealing for TFT fabrication. In Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.NLM
Garcia B, Estrada M, Albertin KF, Páez Carreño MN. Polycrystallization of a-SiC:H layers by excimer laser annealing for TFT fabrication. Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2024 nov. 01 ]Vancouver
Garcia B, Estrada M, Albertin KF, Páez Carreño MN. Polycrystallization of a-SiC:H layers by excimer laser annealing for TFT fabrication. Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2024 nov. 01 ]
