Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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GOMES, Paulo F et al. Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 02 nov. 2024.APA
Gomes, P. F., Godoy, M. P. F., Nakaema, M. K. K., Iikawa, F., Lamas, T. E., & Quivy, A. A. (2003). Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. In Book of Abstracts. Amsterdam: Elsevier Science.NLM
Gomes PF, Godoy MPF, Nakaema MKK, Iikawa F, Lamas TE, Quivy AA. Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. Book of Abstracts. 2003 ;[citado 2024 nov. 02 ]Vancouver
Gomes PF, Godoy MPF, Nakaema MKK, Iikawa F, Lamas TE, Quivy AA. Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. Book of Abstracts. 2003 ;[citado 2024 nov. 02 ]
