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AFM and PL characterization of the continuos evolution cycle of MBE-grown self-assembled InAs quantum dots (2000)
Silva, M. J. da; Quivy, A. A.; González-Borrero, Pedro Pablo; Marega Júnior, Euclydes; Moshegov, N. T.
Source: Resumo. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidades: IF, IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
SILVA, M. J. da et al. AFM and PL characterization of the continuos evolution cycle of MBE-grown self-assembled InAs quantum dots. 2000, Anais.. São Paulo: Sociedade Brasileira de Física, 2000. . Acesso em: 02 ago. 2024.
APA
Silva, M. J. da, Quivy, A. A., González-Borrero, P. P., Marega Júnior, E., & Moshegov, N. T. (2000). AFM and PL characterization of the continuos evolution cycle of MBE-grown self-assembled InAs quantum dots. In Resumo. São Paulo: Sociedade Brasileira de Física.
NLM
Silva MJ da, Quivy AA, González-Borrero PP, Marega Júnior E, Moshegov NT. AFM and PL characterization of the continuos evolution cycle of MBE-grown self-assembled InAs quantum dots. Resumo. 2000 ;[citado 2024 ago. 02 ]
Vancouver
Silva MJ da, Quivy AA, González-Borrero PP, Marega Júnior E, Moshegov NT. AFM and PL characterization of the continuos evolution cycle of MBE-grown self-assembled InAs quantum dots. Resumo. 2000 ;[citado 2024 ago. 02 ]
Artigo de periodico
Strain relaxation-induced modifications of the optical properties of self-assembled InAs quantum dot superlattices (2000)
Petitprez, E.; Moshegov, N. T.; Marega Júnior, Euclydes; Mazel, A.; Dorignac, D.; Fourmeaux, R.
Source: Journal of Vacuum Science & Tecnology B. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PETITPREZ, E. et al. Strain relaxation-induced modifications of the optical properties of self-assembled InAs quantum dot superlattices. Journal of Vacuum Science & Tecnology B, v. 18, n. 3, p. 1493-1495, 2000Tradução . . Disponível em: https://doi.org/10.1116/1.591411. Acesso em: 02 ago. 2024.
APA
Petitprez, E., Moshegov, N. T., Marega Júnior, E., Mazel, A., Dorignac, D., & Fourmeaux, R. (2000). Strain relaxation-induced modifications of the optical properties of self-assembled InAs quantum dot superlattices. Journal of Vacuum Science & Tecnology B, 18( 3), 1493-1495. doi:10.1116/1.591411
NLM
Petitprez E, Moshegov NT, Marega Júnior E, Mazel A, Dorignac D, Fourmeaux R. Strain relaxation-induced modifications of the optical properties of self-assembled InAs quantum dot superlattices [Internet]. Journal of Vacuum Science & Tecnology B. 2000 ; 18( 3): 1493-1495.[citado 2024 ago. 02 ] Available from: https://doi.org/10.1116/1.591411
Vancouver
Petitprez E, Moshegov NT, Marega Júnior E, Mazel A, Dorignac D, Fourmeaux R. Strain relaxation-induced modifications of the optical properties of self-assembled InAs quantum dot superlattices [Internet]. Journal of Vacuum Science & Tecnology B. 2000 ; 18( 3): 1493-1495.[citado 2024 ago. 02 ] Available from: https://doi.org/10.1116/1.591411
Artigo de periodico
Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures (2000)
Pusep, Yuri A.; Silva, M. T. O.; Galzerani, J. C.; Rodrigues, S. C. P.; Scolfaro, L. M. R.; Lima, A. P.; Quivy, A. A.; Leite, J. R.; Moshegov, N. T.; Basmaji, Pierre
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A. et al. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, v. 87, n. 4, p. 1825-1831, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372097. Acesso em: 02 ago. 2024.
APA
Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., et al. (2000). Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87( 4), 1825-1831. doi:10.1063/1.372097
NLM
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2024 ago. 02 ] Available from: https://doi.org/10.1063/1.372097
Vancouver
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2024 ago. 02 ] Available from: https://doi.org/10.1063/1.372097

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