Source: Journal of Applied Physics. Unidade: IF
Assunto: FÍSICA
ABNT
MATSUOKA, Masao et al. Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition. Journal of Applied Physics, v. 88, n. 6, p. 3773-3775, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.1286108. Acesso em: 09 nov. 2024.APA
Matsuoka, M., Isotani, S., Chubaci, J. F. D., Miyake, S., Setsuhara, Y., Ogata, K., & Kuratani, N. (2000). Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition. Journal of Applied Physics, 88( 6), 3773-3775. doi:10.1063/1.1286108NLM
Matsuoka M, Isotani S, Chubaci JFD, Miyake S, Setsuhara Y, Ogata K, Kuratani N. Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition [Internet]. Journal of Applied Physics. 2000 ; 88( 6): 3773-3775.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1063/1.1286108Vancouver
Matsuoka M, Isotani S, Chubaci JFD, Miyake S, Setsuhara Y, Ogata K, Kuratani N. Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition [Internet]. Journal of Applied Physics. 2000 ; 88( 6): 3773-3775.[citado 2024 nov. 09 ] Available from: https://doi.org/10.1063/1.1286108