'AL' IND. 2''O' IND. 3' thin film multilayer structure for application in RRAM devices (2018)
Source: Solid-State Electronics. Unidade: IF
Subjects: LASER, FÍSICA NUCLEAR, ÍONS
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RODRIGUES, A. N. et al. 'AL' IND. 2''O' IND. 3' thin film multilayer structure for application in RRAM devices. Solid-State Electronics, v. no 2018, p. 1-5, 2018Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2018.08.004. Acesso em: 07 nov. 2024.APA
Rodrigues, A. N., Santos, Y. P., Macedo, M. A., & Rodrigues, C. L. (2018). 'AL' IND. 2''O' IND. 3' thin film multilayer structure for application in RRAM devices. Solid-State Electronics, no 2018, 1-5. doi:10.1016/j.sse.2018.08.004NLM
Rodrigues AN, Santos YP, Macedo MA, Rodrigues CL. 'AL' IND. 2''O' IND. 3' thin film multilayer structure for application in RRAM devices [Internet]. Solid-State Electronics. 2018 ; no 2018 1-5.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1016/j.sse.2018.08.004Vancouver
Rodrigues AN, Santos YP, Macedo MA, Rodrigues CL. 'AL' IND. 2''O' IND. 3' thin film multilayer structure for application in RRAM devices [Internet]. Solid-State Electronics. 2018 ; no 2018 1-5.[citado 2024 nov. 07 ] Available from: https://doi.org/10.1016/j.sse.2018.08.004
