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Artigo de periodico
Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices (2015)
Machado, Wanda Valle Marcondes; Assali, L. V. C. ; Justo Filho, João Francisco
Source: Journal of Applied Physics. Unidade: EP
Subjects: ELETROMAGNETISMO, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MACHADO, Wanda Valle Marcondes e ASSALI, L. V. C. e JUSTO FILHO, João Francisco. Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices. Journal of Applied Physics, v. 118, n. 4, p. 045704, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4927293. Acesso em: 05 out. 2024.
APA
Machado, W. V. M., Assali, L. V. C., & Justo Filho, J. F. (2015). Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices. Journal of Applied Physics, 118( 4), 045704. doi:10.1063/1.4927293
NLM
Machado WVM, Assali LVC, Justo Filho JF. Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices [Internet]. Journal of Applied Physics. 2015 ; 118( 4): 045704.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.4927293
Vancouver
Machado WVM, Assali LVC, Justo Filho JF. Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices [Internet]. Journal of Applied Physics. 2015 ; 118( 4): 045704.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.4927293
Artigo de periodico
Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation (2002)
Antonelli, Alex; Justo Filho, João Francisco ; Fazzio, Adalberto
Source: Journal of Applied Physics. Unidade: IF
Subjects: SEMICONDUTORES, MATERIAIS (PROPRIEDADES ELÉTRICAS), ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ANTONELLI, Alex e JUSTO FILHO, João Francisco e FAZZIO, Adalberto. Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation. Journal of Applied Physics, v. 91, n. 9, p. 5892-5895, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009005892000001&idtype=cvips. Acesso em: 05 out. 2024.
APA
Antonelli, A., Justo Filho, J. F., & Fazzio, A. (2002). Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation. Journal of Applied Physics, 91( 9), 5892-5895. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009005892000001&idtype=cvips
NLM
Antonelli A, Justo Filho JF, Fazzio A. Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 5892-5895.[citado 2024 out. 05 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009005892000001&idtype=cvips
Vancouver
Antonelli A, Justo Filho JF, Fazzio A. Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 5892-5895.[citado 2024 out. 05 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009005892000001&idtype=cvips
Artigo de periodico
Iron-acceptor pairs in silicon: structure and formation processes (2001)
Zhao, Song; Assali, L. V. C. ; Justo Filho, João Francisco ; Gilmer, George H; Kimerling, Lionel C
Source: Journal of Applied Physics. Unidades: IF, EP
Subjects: RESSONÂNCIA PARAMAGNÉTICA ELETRÔNICA, ELETROSTÁTICA, ELASTICIDADE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZHAO, Song et al. Iron-acceptor pairs in silicon: structure and formation processes. Journal of Applied Physics, v. 90, n. 2744-2754, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1389763. Acesso em: 05 out. 2024.
APA
Zhao, S., Assali, L. V. C., Justo Filho, J. F., Gilmer, G. H., & Kimerling, L. C. (2001). Iron-acceptor pairs in silicon: structure and formation processes. Journal of Applied Physics, 90( 2744-2754). doi:10.1063/1.1389763
NLM
Zhao S, Assali LVC, Justo Filho JF, Gilmer GH, Kimerling LC. Iron-acceptor pairs in silicon: structure and formation processes [Internet]. Journal of Applied Physics. 2001 ; 90( 2744-2754):[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.1389763
Vancouver
Zhao S, Assali LVC, Justo Filho JF, Gilmer GH, Kimerling LC. Iron-acceptor pairs in silicon: structure and formation processes [Internet]. Journal of Applied Physics. 2001 ; 90( 2744-2754):[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.1389763
Artigo de periodico
Hydrogen role on the properties of amorphous silicon nitride (1999)
Mota, Fernando de Brito; Justo Filho, João Francisco ; Fazzio, Adalberto
Source: Journal of Applied Physics. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MOTA, Fernando de Brito e JUSTO FILHO, João Francisco e FAZZIO, Adalberto. Hydrogen role on the properties of amorphous silicon nitride. Journal of Applied Physics, v. 86, n. 4, p. 1843-1847, 1999Tradução . . Disponível em: https://doi.org/10.1063/1.370977. Acesso em: 05 out. 2024.
APA
Mota, F. de B., Justo Filho, J. F., & Fazzio, A. (1999). Hydrogen role on the properties of amorphous silicon nitride. Journal of Applied Physics, 86( 4), 1843-1847. doi:10.1063/1.370977
NLM
Mota F de B, Justo Filho JF, Fazzio A. Hydrogen role on the properties of amorphous silicon nitride [Internet]. Journal of Applied Physics. 1999 ; 86( 4): 1843-1847.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.370977
Vancouver
Mota F de B, Justo Filho JF, Fazzio A. Hydrogen role on the properties of amorphous silicon nitride [Internet]. Journal of Applied Physics. 1999 ; 86( 4): 1843-1847.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.370977

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