Hyperspherical adiabatic approach for excitons bound to ionized donors in semiconductors (1998)
Source: Physical Review B. Unidade: IFSC
Subjects: FÍSICA, FÍSICA MATEMÁTICA, FÍSICA MODERNA
ABNT
DE GROOTE, J J et al. Hyperspherical adiabatic approach for excitons bound to ionized donors in semiconductors. Physical Review B, v. 58, n. 16, p. 10383-10388, 1998Tradução . . Disponível em: https://doi.org/10.1103/physrevb.58.10383. Acesso em: 04 out. 2024.APA
De Groote, J. J., Santos, A. S., Masili, M., & Hornos, J. E. M. (1998). Hyperspherical adiabatic approach for excitons bound to ionized donors in semiconductors. Physical Review B, 58( 16), 10383-10388. doi:10.1103/physrevb.58.10383NLM
De Groote JJ, Santos AS, Masili M, Hornos JEM. Hyperspherical adiabatic approach for excitons bound to ionized donors in semiconductors [Internet]. Physical Review B. 1998 ; 58( 16): 10383-10388.[citado 2024 out. 04 ] Available from: https://doi.org/10.1103/physrevb.58.10383Vancouver
De Groote JJ, Santos AS, Masili M, Hornos JEM. Hyperspherical adiabatic approach for excitons bound to ionized donors in semiconductors [Internet]. Physical Review B. 1998 ; 58( 16): 10383-10388.[citado 2024 out. 04 ] Available from: https://doi.org/10.1103/physrevb.58.10383