Growth and homogeneity of 'Cr POT.+3' doped GdAl'O IND.3' single crystals (2000)
Source: Selected papers on laser crystal growth. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, DIELÉTRICOS
ABNT
ANDREETA, José Pedro e HERNANDES, Antônio Carlos e GALLO, Nelson Jose Heraldo. Growth and homogeneity of 'Cr POT.+3' doped GdAl'O IND.3' single crystals. Selected papers on laser crystal growth. Tradução . Bellingham: SPIE Optical Engineering Press, 2000. . . Acesso em: 18 ago. 2024.APA
Andreeta, J. P., Hernandes, A. C., & Gallo, N. J. H. (2000). Growth and homogeneity of 'Cr POT.+3' doped GdAl'O IND.3' single crystals. In Selected papers on laser crystal growth. Bellingham: SPIE Optical Engineering Press.NLM
Andreeta JP, Hernandes AC, Gallo NJH. Growth and homogeneity of 'Cr POT.+3' doped GdAl'O IND.3' single crystals. In: Selected papers on laser crystal growth. Bellingham: SPIE Optical Engineering Press; 2000. [citado 2024 ago. 18 ]Vancouver
Andreeta JP, Hernandes AC, Gallo NJH. Growth and homogeneity of 'Cr POT.+3' doped GdAl'O IND.3' single crystals. In: Selected papers on laser crystal growth. Bellingham: SPIE Optical Engineering Press; 2000. [citado 2024 ago. 18 ]