Growth and homogeneity of 'Cr POT.+3' doped GdAl'O IND.3' single crystals (2000)
- Authors:
- USP affiliated authors: ANDREETA, JOSE PEDRO - IFSC ; HERNANDES, ANTONIO CARLOS - IFSC ; GALLO, NELSON JOSE HERALDO - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; DIELÉTRICOS
- Language: Inglês
- Imprenta:
- Publisher: SPIE Optical Engineering Press
- Publisher place: Bellingham
- Date published: 2000
- ISBN: 0-8194-3811-1
- Source:
-
ABNT
ANDREETA, José Pedro e HERNANDES, Antônio Carlos e GALLO, Nelson Jose Heraldo. Growth and homogeneity of 'Cr POT.+3' doped GdAl'O IND.3' single crystals. Selected papers on laser crystal growth. Tradução . Bellingham: SPIE Optical Engineering Press, 2000. . . Acesso em: 11 fev. 2026. -
APA
Andreeta, J. P., Hernandes, A. C., & Gallo, N. J. H. (2000). Growth and homogeneity of 'Cr POT.+3' doped GdAl'O IND.3' single crystals. In Selected papers on laser crystal growth. Bellingham: SPIE Optical Engineering Press. -
NLM
Andreeta JP, Hernandes AC, Gallo NJH. Growth and homogeneity of 'Cr POT.+3' doped GdAl'O IND.3' single crystals. In: Selected papers on laser crystal growth. Bellingham: SPIE Optical Engineering Press; 2000. [citado 2026 fev. 11 ] -
Vancouver
Andreeta JP, Hernandes AC, Gallo NJH. Growth and homogeneity of 'Cr POT.+3' doped GdAl'O IND.3' single crystals. In: Selected papers on laser crystal growth. Bellingham: SPIE Optical Engineering Press; 2000. [citado 2026 fev. 11 ] - Defeitos em cristais de 'BI IND.12' 'TI' 'O IND.20'
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- Estabilizacao holografica aplicada ao estudo de cristais fotorrefrativos de 'BI IND.12''TI''O IND.20'
- Stabilized holographic setup for the real-time continuous measurement of surface vibrational mode patterns
- Direct observation of the structural defects in oxide superconductors of high tc single crystal
- Preparacao de monocristais de tgs por solucao aquosa
- Evaluation of the electric field distribution in the volume of electro-optic crystals from local electro-optic coeficient measurements
- Crescimento e caracterizacao de cristais de bso e bto
- Preparacao e caracterizacao de ceramicas supercondutoras
- Electric field influence in dopant segregation in the 'LI''NB''O IND.3': 'CR POT.3+' crystal growth process
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