Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy (1991)
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
ABNT
HENRIQUES, André Bohomoletz et al. Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy. Semiconductor Science and Technology, v. 6 , p. 45, 1991Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/6/1/009. Acesso em: 21 out. 2024.APA
Henriques, A. B., Chidley, E. T. R., Haywood, S. K., Nicholas, R. J., Mason, N. J., & Walker, P. J. (1991). Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy. Semiconductor Science and Technology, 6 , 45. doi:10.1088/0268-1242/6/1/009NLM
Henriques AB, Chidley ETR, Haywood SK, Nicholas RJ, Mason NJ, Walker PJ. Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy [Internet]. Semiconductor Science and Technology. 1991 ;6 45.[citado 2024 out. 21 ] Available from: https://doi.org/10.1088/0268-1242/6/1/009Vancouver
Henriques AB, Chidley ETR, Haywood SK, Nicholas RJ, Mason NJ, Walker PJ. Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy [Internet]. Semiconductor Science and Technology. 1991 ;6 45.[citado 2024 out. 21 ] Available from: https://doi.org/10.1088/0268-1242/6/1/009