Gomez Armas, Luis Enrique 
; Seabra, Antonio Carlos ; Silva, E C F; Duarte, C A; Pagnossin, Ivan Ramos; Quivy, Alain André ; Menezes, J. W; Jacinto, Carlos; Gusev, Gennady
Source: Physica E: Low-dimensional Systems and Nanostructures. Unidades: EP, IF
Assunto: ELETRÔNICA
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GOMEZ ARMAS, Luis Enrique et al. Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells. Physica E: Low-dimensional Systems and Nanostructures, v. 61, p. 158-166, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2014.04.001. Acesso em: 02 jul. 2024.APA
Gomez Armas, L. E., Seabra, A. C., Silva, E. C. F., Duarte, C. A., Pagnossin, I. R., Quivy, A. A., et al. (2014). Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells. Physica E: Low-dimensional Systems and Nanostructures, 61, 158-166. doi:10.1016/j.physe.2014.04.001NLM
Gomez Armas LE, Seabra AC, Silva ECF, Duarte CA, Pagnossin IR, Quivy AA, Menezes JW, Jacinto C, Gusev G. Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells [Internet]. Physica E: Low-dimensional Systems and Nanostructures. 2014 ; 61 158-166.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1016/j.physe.2014.04.001Vancouver
Gomez Armas LE, Seabra AC, Silva ECF, Duarte CA, Pagnossin IR, Quivy AA, Menezes JW, Jacinto C, Gusev G. Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells [Internet]. Physica E: Low-dimensional Systems and Nanostructures. 2014 ; 61 158-166.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1016/j.physe.2014.04.001
