Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells (2014)
- Authors:
- USP affiliated authors: SEABRA, ANTONIO CARLOS - EP ; PAGNOSSIN, IVAN RAMOS - IF ; QUIVY, ALAIN ANDRE - IF ; GUSEV, GENNADY - IF ; Jacinto, Carlos -
- Unidades: EP; IF
- DOI: 10.1016/j.physe.2014.04.001
- Assunto: ELETRÔNICA
- Language: Inglês
- Source:
- Título do periódico: Physica E: Low-dimensional Systems and Nanostructures
- Volume/Número/Paginação/Ano: v. 61, p. 158-166, July 2014
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
GOMEZ ARMAS, Luis Enrique et al. Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells. Physica E: Low-dimensional Systems and Nanostructures, v. 61, p. 158-166, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2014.04.001. Acesso em: 24 abr. 2024. -
APA
Gomez Armas, L. E., Seabra, A. C., Silva, E. C. F., Duarte, C. A., Pagnossin, I. R., Quivy, A. A., et al. (2014). Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells. Physica E: Low-dimensional Systems and Nanostructures, 61, 158-166. doi:10.1016/j.physe.2014.04.001 -
NLM
Gomez Armas LE, Seabra AC, Silva ECF, Duarte CA, Pagnossin IR, Quivy AA, Menezes JW, Jacinto C, Gusev G. Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells [Internet]. Physica E: Low-dimensional Systems and Nanostructures. 2014 ; 61 158-166.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1016/j.physe.2014.04.001 -
Vancouver
Gomez Armas LE, Seabra AC, Silva ECF, Duarte CA, Pagnossin IR, Quivy AA, Menezes JW, Jacinto C, Gusev G. Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells [Internet]. Physica E: Low-dimensional Systems and Nanostructures. 2014 ; 61 158-166.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1016/j.physe.2014.04.001 - Influence of the 'AL' concentration on the electronic properties of coupled and uncoupled 'AL' IND. 'qui''GA' IND. 1−'qui''AS'/'AL''AS'/'AL' IND. gama''GA IND. 1−'gama''AS' double quantum wells
- Quantum half ferromagnet in a two-dimensional electron gas coupled with quantum dots
- Eletric field control of the scattering processes in semiconductor nanostructures
- Spin valve effect and Hall resistance in a wide parabolic well
- Spin valve effect and Hall resistance in a wide parabolic well
- Variação do coeficiente Hall em poços parabalólicos largos de 'Al IND.x''Ga IND. x-1' As em função do campo magnético
- Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots
- Subband energy levels of 'IN' IND.0,75''GA' IND. 0,25''AS'/'IN' IND. 0,75''AL' IND. 0,25''AS' single square quantum well
- Magnetotransport in "Al IND.X" "Ga IND.X-1" As quantum wells with different potential shapes
- Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells
Informações sobre o DOI: 10.1016/j.physe.2014.04.001 (Fonte: oaDOI API)
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