Fonte: Physica E: Low-dimensional Systems and Nanostructures. Unidades: EP, IF
Assunto: ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOMEZ ARMAS, Luis Enrique et al. Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells. Physica E: Low-dimensional Systems and Nanostructures, v. 61, p. 158-166, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2014.04.001. Acesso em: 23 ago. 2024.APA
Gomez Armas, L. E., Seabra, A. C., Silva, E. C. F., Duarte, C. A., Pagnossin, I. R., Quivy, A. A., et al. (2014). Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells. Physica E: Low-dimensional Systems and Nanostructures, 61, 158-166. doi:10.1016/j.physe.2014.04.001NLM
Gomez Armas LE, Seabra AC, Silva ECF, Duarte CA, Pagnossin IR, Quivy AA, Menezes JW, Jacinto C, Gusev G. Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells [Internet]. Physica E: Low-dimensional Systems and Nanostructures. 2014 ; 61 158-166.[citado 2024 ago. 23 ] Available from: https://doi.org/10.1016/j.physe.2014.04.001Vancouver
Gomez Armas LE, Seabra AC, Silva ECF, Duarte CA, Pagnossin IR, Quivy AA, Menezes JW, Jacinto C, Gusev G. Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells [Internet]. Physica E: Low-dimensional Systems and Nanostructures. 2014 ; 61 158-166.[citado 2024 ago. 23 ] Available from: https://doi.org/10.1016/j.physe.2014.04.001