Broadening of the si doping layer in planar-doped gaas in the limit of high concentrations (1991)
Source: Solid State Communications. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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RODRIGUES, R et al. Broadening of the si doping layer in planar-doped gaas in the limit of high concentrations. Solid State Communications, v. 78, p. 793-6, 1991Tradução . . Disponível em: https://doi.org/10.1016/0038-1098(91)90622-3. Acesso em: 08 nov. 2024.APA
Rodrigues, R., Guimaraes, P. S. S., Sampaio, J. F., Nogueira, R. A., Oliveira Junior, A. T., Dias, I. F. L., et al. (1991). Broadening of the si doping layer in planar-doped gaas in the limit of high concentrations. Solid State Communications, 78, 793-6. doi:10.1016/0038-1098(91)90622-3NLM
Rodrigues R, Guimaraes PSS, Sampaio JF, Nogueira RA, Oliveira Junior AT, Dias IFL, Bezerra JC, Oliveira AG, Chaves AS, Scolfaro LMR. Broadening of the si doping layer in planar-doped gaas in the limit of high concentrations [Internet]. Solid State Communications. 1991 ;78 793-6.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/0038-1098(91)90622-3Vancouver
Rodrigues R, Guimaraes PSS, Sampaio JF, Nogueira RA, Oliveira Junior AT, Dias IFL, Bezerra JC, Oliveira AG, Chaves AS, Scolfaro LMR. Broadening of the si doping layer in planar-doped gaas in the limit of high concentrations [Internet]. Solid State Communications. 1991 ;78 793-6.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/0038-1098(91)90622-3
