Source: Japanese Journal of Applied Physics. Unidade: FFCLRP
Subjects: MEDICINA FÍSICA, FÍSICA, RESSONÂNCIA MAGNÉTICA NUCLEAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
KAWACHI, Genshiro et al. Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin: film transistors. Japanese Journal of Applied Physics, v. 36, n. ja 1997, p. 121-125, 1997Tradução . . Acesso em: 02 nov. 2024.APA
Kawachi, G., Graeff, C. F. de O., Brandt, M. S., & Stutzmann, M. (1997). Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin: film transistors. Japanese Journal of Applied Physics, 36( ja 1997), 121-125.NLM
Kawachi G, Graeff CF de O, Brandt MS, Stutzmann M. Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin: film transistors. Japanese Journal of Applied Physics. 1997 ; 36( ja 1997): 121-125.[citado 2024 nov. 02 ]Vancouver
Kawachi G, Graeff CF de O, Brandt MS, Stutzmann M. Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin: film transistors. Japanese Journal of Applied Physics. 1997 ; 36( ja 1997): 121-125.[citado 2024 nov. 02 ]
