Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin: film transistors (1997)
- Authors:
- Autor USP: GRAEFF, CARLOS FREDERICO DE OLIVEIRA - FFCLRP
- Unidade: FFCLRP
- Subjects: MEDICINA FÍSICA; FÍSICA; RESSONÂNCIA MAGNÉTICA NUCLEAR
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Japanese Journal of Applied Physics
- Volume/Número/Paginação/Ano: v. 36, pt. 1, n. 1A, p. 121-125, jan. 1997
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ABNT
KAWACHI, Genshiro et al. Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin: film transistors. Japanese Journal of Applied Physics, v. 36, n. ja 1997, p. 121-125, 1997Tradução . . Acesso em: 19 abr. 2024. -
APA
Kawachi, G., Graeff, C. F. de O., Brandt, M. S., & Stutzmann, M. (1997). Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin: film transistors. Japanese Journal of Applied Physics, 36( ja 1997), 121-125. -
NLM
Kawachi G, Graeff CF de O, Brandt MS, Stutzmann M. Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin: film transistors. Japanese Journal of Applied Physics. 1997 ; 36( ja 1997): 121-125.[citado 2024 abr. 19 ] -
Vancouver
Kawachi G, Graeff CF de O, Brandt MS, Stutzmann M. Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin: film transistors. Japanese Journal of Applied Physics. 1997 ; 36( ja 1997): 121-125.[citado 2024 abr. 19 ] - Ressonãncia de spin eletrônico de condução detectada eletricamente em heteroestruturas de Si/'Si ind 0.7' 'Ge ind.0.3'
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