Fonte: Japanese Journal of Applied Physics. Unidade: FFCLRP
Assuntos: MEDICINA FÍSICA, FÍSICA, RESSONÂNCIA MAGNÉTICA NUCLEAR
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KAWACHI, Genshiro et al. Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin: film transistors. Japanese Journal of Applied Physics, v. 36, n. ja 1997, p. 121-125, 1997Tradução . . Acesso em: 12 set. 2024.APA
Kawachi, G., Graeff, C. F. de O., Brandt, M. S., & Stutzmann, M. (1997). Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin: film transistors. Japanese Journal of Applied Physics, 36( ja 1997), 121-125.NLM
Kawachi G, Graeff CF de O, Brandt MS, Stutzmann M. Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin: film transistors. Japanese Journal of Applied Physics. 1997 ; 36( ja 1997): 121-125.[citado 2024 set. 12 ]Vancouver
Kawachi G, Graeff CF de O, Brandt MS, Stutzmann M. Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin: film transistors. Japanese Journal of Applied Physics. 1997 ; 36( ja 1997): 121-125.[citado 2024 set. 12 ]
