Analog parameters of strained non-rectangular triplegate FinFETs (2010)
Bühler, Rudolf Theoderich; Giacomini, R.; Martino, João Antonio 
Fonte: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: SIMULAÇÃO DE SISTEMAS
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BÜHLER, Rudolf Theoderich e GIACOMINI, R. e MARTINO, João Antonio. Analog parameters of strained non-rectangular triplegate FinFETs. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 21-28, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474138. Acesso em: 14 out. 2025.APA
Bühler, R. T., Giacomini, R., & Martino, J. A. (2010). Analog parameters of strained non-rectangular triplegate FinFETs. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 21-28. doi:10.1149/1.3474138NLM
Bühler RT, Giacomini R, Martino JA. Analog parameters of strained non-rectangular triplegate FinFETs [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 21-28.[citado 2025 out. 14 ] Available from: https://doi.org/10.1149/1.3474138Vancouver
Bühler RT, Giacomini R, Martino JA. Analog parameters of strained non-rectangular triplegate FinFETs [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 21-28.[citado 2025 out. 14 ] Available from: https://doi.org/10.1149/1.3474138
